JPS5762545A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5762545A
JPS5762545A JP13831680A JP13831680A JPS5762545A JP S5762545 A JPS5762545 A JP S5762545A JP 13831680 A JP13831680 A JP 13831680A JP 13831680 A JP13831680 A JP 13831680A JP S5762545 A JPS5762545 A JP S5762545A
Authority
JP
Japan
Prior art keywords
film
oxidized
region
sixnyoz
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13831680A
Other languages
Japanese (ja)
Inventor
Hidetoshi Ishiwari
Hikosuke Shibayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13831680A priority Critical patent/JPS5762545A/en
Publication of JPS5762545A publication Critical patent/JPS5762545A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To improve the yield of a semiconductor device by selectively oxidizing it by utilizing an SiXNYOZ film, suppressing the quantity of nitrided compound becoming a defect at the time of forming a gate oxidized film and preventing the improper gate withstand voltage. CONSTITUTION:An SiO2 film 2 is formed by thermal oxidization on a silicon substrate 1. Then, a silicon oxynitrided film (SiXNYOZ film) 8 and an Si3N4 film 3 are grown by a chemical gas phase growth method. Subsequently, these films are patterned. Thereafter, the region except the non-oxidzed region covered with these films is selectively oxidized to form a field oxidized film 4. Then, an element is formed on the non-oxidized region. In this manner, it can prevent the improper gate withstand voltage.
JP13831680A 1980-10-03 1980-10-03 Manufacture of semiconductor device Pending JPS5762545A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13831680A JPS5762545A (en) 1980-10-03 1980-10-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13831680A JPS5762545A (en) 1980-10-03 1980-10-03 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5762545A true JPS5762545A (en) 1982-04-15

Family

ID=15219038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13831680A Pending JPS5762545A (en) 1980-10-03 1980-10-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5762545A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906595A (en) * 1986-12-08 1990-03-06 U.S. Philips Corporation Method of manufacturing a semiconductor device, in which a silicon wafer is provided at its surface with field oxide regions
KR100345662B1 (en) * 1995-12-16 2002-11-07 주식회사 하이닉스반도체 Method for forming gate insulating layer in semiconductor device
KR100455737B1 (en) * 1998-12-30 2005-04-19 주식회사 하이닉스반도체 Gate oxide film formation method of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50123275A (en) * 1974-03-13 1975-09-27
JPS5563847A (en) * 1978-11-08 1980-05-14 Fujitsu Ltd Manufacturing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50123275A (en) * 1974-03-13 1975-09-27
JPS5563847A (en) * 1978-11-08 1980-05-14 Fujitsu Ltd Manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906595A (en) * 1986-12-08 1990-03-06 U.S. Philips Corporation Method of manufacturing a semiconductor device, in which a silicon wafer is provided at its surface with field oxide regions
KR100345662B1 (en) * 1995-12-16 2002-11-07 주식회사 하이닉스반도체 Method for forming gate insulating layer in semiconductor device
KR100455737B1 (en) * 1998-12-30 2005-04-19 주식회사 하이닉스반도체 Gate oxide film formation method of semiconductor device

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