JPS56152236A - Method of forming contacting hole - Google Patents

Method of forming contacting hole

Info

Publication number
JPS56152236A
JPS56152236A JP5646380A JP5646380A JPS56152236A JP S56152236 A JPS56152236 A JP S56152236A JP 5646380 A JP5646380 A JP 5646380A JP 5646380 A JP5646380 A JP 5646380A JP S56152236 A JPS56152236 A JP S56152236A
Authority
JP
Japan
Prior art keywords
film
contacting hole
mask
si3n4
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5646380A
Other languages
Japanese (ja)
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5646380A priority Critical patent/JPS56152236A/en
Publication of JPS56152236A publication Critical patent/JPS56152236A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To enhance the integrating density of a semiconductor device by etching two-layer film of an insulating film and a nitrided silicon film formed on a semiconductor substrate with a mask formed by the selective oxidation of a silicon film, thereby forming a microminiature contacting hole. CONSTITUTION:An SiO2 film 2, an Si3N4 film 6, a polycrystalline Si film 7, an SiO2 film 8 and an Si3N4 film 9 are laminated on a semiconductor substrate 1, with an Si3N4 film 9a as a mask the film 7 is oxidized to be converted into an SiO2 film 11, and this thermally oxidized film 11 is used as a mask to sequentially etch the films 6 and 2, and a contacting hole is thus formed. Thus, a microminiature contacting hole employing a photomechanical process less than the critical size can be formed by utilizing the lateral oxidation with the selective oxidation.
JP5646380A 1980-04-28 1980-04-28 Method of forming contacting hole Pending JPS56152236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5646380A JPS56152236A (en) 1980-04-28 1980-04-28 Method of forming contacting hole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5646380A JPS56152236A (en) 1980-04-28 1980-04-28 Method of forming contacting hole

Publications (1)

Publication Number Publication Date
JPS56152236A true JPS56152236A (en) 1981-11-25

Family

ID=13027789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5646380A Pending JPS56152236A (en) 1980-04-28 1980-04-28 Method of forming contacting hole

Country Status (1)

Country Link
JP (1) JPS56152236A (en)

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