JPS5683972A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5683972A JPS5683972A JP16102779A JP16102779A JPS5683972A JP S5683972 A JPS5683972 A JP S5683972A JP 16102779 A JP16102779 A JP 16102779A JP 16102779 A JP16102779 A JP 16102779A JP S5683972 A JPS5683972 A JP S5683972A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- type
- region
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000001312 dry etching Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To improve a contact of wiring provided on a window corner made gently sloping by a method wherein dry and chemical etchings are applied by turns in the use of a mask, when a window as deep as it reaches a diffused region is opened in a laminated film of an SiO2 film and PSG film formed on a semiconductor substrate. CONSTITUTION:A field SiO2 film 5 and a gate electrode 3 separated from th former through a gate insulating film 2 are respectively provided on an N type Si substrate 1, and a P type impurity is diffused with those as the mask to form a P type region 4 of a source and a drain etc. Then, an SiO2 film 6 coupled with the film 5 and an Si3N4 film 7 placed on the film 6 are formed in lamination on the whole surface by vapor growth and the PSG layer 8 is attached thereon to be covered with a resist film 10. After that, the film 10 is made patterning and with it as the mask, a widow for the region 4 is opened. At this time, the dry etching with a gas in Freon type is applied first and then, the film 10 is removed and the window corner is made gentle which is produced on the layer 8 soaked in fluoric acid solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16102779A JPS5683972A (en) | 1979-12-12 | 1979-12-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16102779A JPS5683972A (en) | 1979-12-12 | 1979-12-12 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5683972A true JPS5683972A (en) | 1981-07-08 |
Family
ID=15727191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16102779A Pending JPS5683972A (en) | 1979-12-12 | 1979-12-12 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5683972A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6236385A (en) * | 1985-08-05 | 1987-02-17 | Fujisawa Pharmaceut Co Ltd | 3,7-disubstituted-3-cephem compound and production thereof |
| JPS6427273A (en) * | 1987-07-22 | 1989-01-30 | Nec Corp | Manufacture of vertical field effect transistor |
-
1979
- 1979-12-12 JP JP16102779A patent/JPS5683972A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6236385A (en) * | 1985-08-05 | 1987-02-17 | Fujisawa Pharmaceut Co Ltd | 3,7-disubstituted-3-cephem compound and production thereof |
| JPS6427273A (en) * | 1987-07-22 | 1989-01-30 | Nec Corp | Manufacture of vertical field effect transistor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES466901A1 (en) | Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation | |
| JPS5599744A (en) | Manufacture of semiconductor device | |
| JPS5683972A (en) | Manufacture of semiconductor device | |
| JPS5688358A (en) | Manufacture of semiconductor device | |
| JPS56111264A (en) | Manufacture of semiconductor device | |
| JPS57176767A (en) | Manufacture of semiconductor device | |
| JPS5526637A (en) | Manufacturing of semiconductor device | |
| JPS5613735A (en) | Manufacture of semiconductor device | |
| JPS56133844A (en) | Semiconductor device | |
| JPS567482A (en) | Manufacturing of semiconductor device | |
| JPS5633841A (en) | Manufacture of semiconductor device | |
| JPS5559778A (en) | Method of fabricating semiconductor device | |
| JPS6465876A (en) | Manufacture of semiconductor device | |
| JPS5717129A (en) | Manufacture of semiconductor device | |
| JPS57206071A (en) | Semiconductor device and manufacture thereof | |
| JPS5735340A (en) | Manufacture of semiconductor device | |
| JPS6481269A (en) | Manufacture of semiconductor device | |
| JPS6459963A (en) | Manufacture of field-effect transistor | |
| JPS5762542A (en) | Manufacture of semiconductor device | |
| JPS57139927A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5565456A (en) | Manufacture of semiconductor device | |
| JPS57102047A (en) | Manufacture of amorphous semiconductor device | |
| JPS55160445A (en) | Manufacture of semiconductor device | |
| JPS54148477A (en) | Manufacture of semiconductor device | |
| KR880013236A (en) | Manufacturing Method of Semiconductor Device |