JPS6465876A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6465876A JPS6465876A JP22208787A JP22208787A JPS6465876A JP S6465876 A JPS6465876 A JP S6465876A JP 22208787 A JP22208787 A JP 22208787A JP 22208787 A JP22208787 A JP 22208787A JP S6465876 A JPS6465876 A JP S6465876A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- opening
- etching
- insulating layer
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To manufacture a MES-FET easily which is provided with a gate small in length by a method wherein a first insulating layer is subjected to etching through an opening of a resist layer, and a second insulating layer is formed on the exposed face. CONSTITUTION:An opening 5 is provided to a resist layer 3 laminated on a SiO2 layer 2 of a first insulating layer on a GaAs substrate 1, and the layer 2 is removed by etching using the layer 3 as a mask. Next, a SiO2 layer 6 of a second insulating layer is formed on the exposed face, the layer 6 is removed through a dry etching performed from the top, and then a metal layer 7 of Ti-Pt-Au is evaporated. Then, the unremoved part of the layer 6 is removed through a wet etching and the layer 7 on the layer 3 is removed through a lift-off, so that a gate electrode 7a corresponding to the size of the opening 5 is formed, and thus a MES-FET with a gate small in length can be easily manufactured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22208787A JPS6465876A (en) | 1987-09-07 | 1987-09-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22208787A JPS6465876A (en) | 1987-09-07 | 1987-09-07 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6465876A true JPS6465876A (en) | 1989-03-13 |
Family
ID=16776923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22208787A Pending JPS6465876A (en) | 1987-09-07 | 1987-09-07 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6465876A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4981809A (en) * | 1987-08-10 | 1991-01-01 | Sumitomo Electric Industries, Ltd. | Method of forming a mask pattern for the production of transistor |
US6890447B2 (en) | 2001-08-03 | 2005-05-10 | Yamaha Corporation | Method of forming noble metal thin film pattern |
-
1987
- 1987-09-07 JP JP22208787A patent/JPS6465876A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4981809A (en) * | 1987-08-10 | 1991-01-01 | Sumitomo Electric Industries, Ltd. | Method of forming a mask pattern for the production of transistor |
US6890447B2 (en) | 2001-08-03 | 2005-05-10 | Yamaha Corporation | Method of forming noble metal thin film pattern |
KR100490575B1 (en) * | 2001-08-03 | 2005-05-17 | 야마하 가부시키가이샤 | Method of forming noble metal thin film pattern |
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