JPS57103364A - Preparation of field-effect trasistor - Google Patents

Preparation of field-effect trasistor

Info

Publication number
JPS57103364A
JPS57103364A JP17939980A JP17939980A JPS57103364A JP S57103364 A JPS57103364 A JP S57103364A JP 17939980 A JP17939980 A JP 17939980A JP 17939980 A JP17939980 A JP 17939980A JP S57103364 A JPS57103364 A JP S57103364A
Authority
JP
Japan
Prior art keywords
electrodes
whole surface
fet
metal layer
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17939980A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Asai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP17939980A priority Critical patent/JPS57103364A/en
Publication of JPS57103364A publication Critical patent/JPS57103364A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Abstract

PURPOSE:To prepare FET wherein electrodes are provided at an interval of submicrons, by providing a Schottky metal layer on te whole surface of a substrate whereon source and drain electrodes are formed and by forming a gate electrode through etching by using a mask layer which is left in the concave part of a channel region. CONSTITUTION:The source and drain electrodes 24 and 25 are formed by coating on an N type layer 22 provided on a semiinsulating substrate 21 such as Si, SiO2 is connected on the whole surface, anisotropic etching is applied thereto, SiO2 films 44 and 45 are left thereby at the end parts of the electrodes and an N type layer 28 is exposed. Next, a metal layer 29 such as Ti is connected on the whole surface to form a Schottky junction 36. Thereafter a resist, for instance, is applied on the whole surface and is processed, for instance, by O2 plasma to make a resist mask 35 remain on the channel region. Subsequently, the gate electrode 37 is formed by etching the metal layer 29, the mask 35 is removed and thus a structure of FET is prepared. By this constitution, the interval between the electrodes is placed in a submicron order, whereby FET having improved characteristics can be prepared.
JP17939980A 1980-12-18 1980-12-18 Preparation of field-effect trasistor Pending JPS57103364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17939980A JPS57103364A (en) 1980-12-18 1980-12-18 Preparation of field-effect trasistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17939980A JPS57103364A (en) 1980-12-18 1980-12-18 Preparation of field-effect trasistor

Publications (1)

Publication Number Publication Date
JPS57103364A true JPS57103364A (en) 1982-06-26

Family

ID=16065181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17939980A Pending JPS57103364A (en) 1980-12-18 1980-12-18 Preparation of field-effect trasistor

Country Status (1)

Country Link
JP (1) JPS57103364A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0113161A2 (en) * 1982-12-21 1984-07-11 Kabushiki Kaisha Toshiba Method of fabricating a schottky gate field effect transistor
JPS60251671A (en) * 1984-05-29 1985-12-12 Fujitsu Ltd Field-effect type transistor and manufacture thereof
JPS6151980A (en) * 1984-08-22 1986-03-14 Fujitsu Ltd Manufacture of semiconductor device
JPS61127180A (en) * 1984-11-24 1986-06-14 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field-effect transistor
JPS61160972A (en) * 1985-01-08 1986-07-21 Nippon Gakki Seizo Kk Manufacture of semiconductor device
EP0211353A2 (en) * 1985-07-29 1987-02-25 Nippon Telegraph and Telephone Corporation Method for the manufacture of a field effect transistor
EP0237826A2 (en) * 1986-03-19 1987-09-23 Siemens Aktiengesellschaft Method of making a self-aligned metallic contact

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5146867A (en) * 1974-10-18 1976-04-21 Matsushita Electronics Corp Handotaisochino seizohoho
JPS55110038A (en) * 1979-02-19 1980-08-25 Nippon Telegr & Teleph Corp <Ntt> Method for making electrode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5146867A (en) * 1974-10-18 1976-04-21 Matsushita Electronics Corp Handotaisochino seizohoho
JPS55110038A (en) * 1979-02-19 1980-08-25 Nippon Telegr & Teleph Corp <Ntt> Method for making electrode

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0113161A2 (en) * 1982-12-21 1984-07-11 Kabushiki Kaisha Toshiba Method of fabricating a schottky gate field effect transistor
JPS60251671A (en) * 1984-05-29 1985-12-12 Fujitsu Ltd Field-effect type transistor and manufacture thereof
JPS6151980A (en) * 1984-08-22 1986-03-14 Fujitsu Ltd Manufacture of semiconductor device
JPH0326538B2 (en) * 1984-08-22 1991-04-11 Fujitsu Ltd
JPS61127180A (en) * 1984-11-24 1986-06-14 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field-effect transistor
JPH0360179B2 (en) * 1984-11-24 1991-09-12 Nippon Telegraph & Telephone
JPS61160972A (en) * 1985-01-08 1986-07-21 Nippon Gakki Seizo Kk Manufacture of semiconductor device
EP0211353A2 (en) * 1985-07-29 1987-02-25 Nippon Telegraph and Telephone Corporation Method for the manufacture of a field effect transistor
EP0237826A2 (en) * 1986-03-19 1987-09-23 Siemens Aktiengesellschaft Method of making a self-aligned metallic contact

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