JPS57202782A - Formation of gate electrode - Google Patents
Formation of gate electrodeInfo
- Publication number
- JPS57202782A JPS57202782A JP7162281A JP7162281A JPS57202782A JP S57202782 A JPS57202782 A JP S57202782A JP 7162281 A JP7162281 A JP 7162281A JP 7162281 A JP7162281 A JP 7162281A JP S57202782 A JPS57202782 A JP S57202782A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- mask
- channel section
- drain regions
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000010586 diagram Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain the high speed MISFET with excellent high frequency characteristics by a method wherein the increase of parasitic capacity is prevented by forming a gate electrode, which has very small overlapping between source and drain regions, in a self-matching manner. CONSTITUTION:An n<+> type layer 22 is epitaxially grown on a semiinsulating substrate 21, an aperture is provided at a channel section,an etching mask 23 is coated on source and drain regions, an inverted trapezoidal channel section is formed in the layer 22 by performing an etching using a face-anisotropic etching liquid in such a manner that the channel section will be entering into the substrate 21. Then, in the state wherein the mask 23 is left over, a gate insulating film 24 is grown on the surface of the channel section, a metal layer 25 which will be turned to a gate electrode is evaporated on the film 24. Then, the metal layer 25' which is coated on the mask 23 is removed together with the mask 23, and the gate electrode 25 with the very small overlapping between the source and drain regions, which are not indicated in the diagram, can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7162281A JPS57202782A (en) | 1981-05-13 | 1981-05-13 | Formation of gate electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7162281A JPS57202782A (en) | 1981-05-13 | 1981-05-13 | Formation of gate electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57202782A true JPS57202782A (en) | 1982-12-11 |
Family
ID=13465929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7162281A Pending JPS57202782A (en) | 1981-05-13 | 1981-05-13 | Formation of gate electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57202782A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003115500A (en) * | 2001-08-03 | 2003-04-18 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
| JP2012508973A (en) * | 2008-11-13 | 2012-04-12 | エプコス アクチエンゲゼルシャフト | P-type field effect transistor and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5380976A (en) * | 1976-12-25 | 1978-07-17 | Toshiba Corp | Semiconductor device |
| JPS5390770A (en) * | 1977-01-20 | 1978-08-09 | Toshiba Corp | Production of semiconductor device |
| JPS5676569A (en) * | 1979-11-27 | 1981-06-24 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
-
1981
- 1981-05-13 JP JP7162281A patent/JPS57202782A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5380976A (en) * | 1976-12-25 | 1978-07-17 | Toshiba Corp | Semiconductor device |
| JPS5390770A (en) * | 1977-01-20 | 1978-08-09 | Toshiba Corp | Production of semiconductor device |
| JPS5676569A (en) * | 1979-11-27 | 1981-06-24 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003115500A (en) * | 2001-08-03 | 2003-04-18 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
| US7335542B2 (en) | 2001-08-03 | 2008-02-26 | Fujitsu Limited | Semiconductor device with mushroom electrode and manufacture method thereof |
| US7709310B2 (en) | 2001-08-03 | 2010-05-04 | Fujitsu Limited | Semiconductor device with mushroom electrode and manufacture method thereof |
| US7888193B2 (en) | 2001-08-03 | 2011-02-15 | Fujitsu Limited | Semiconductor device with mushroom electrode and manufacture method thereof |
| US8133775B2 (en) | 2001-08-03 | 2012-03-13 | Fujitsu Limited | Semiconductor device with mushroom electrode and manufacture method thereof |
| JP2012508973A (en) * | 2008-11-13 | 2012-04-12 | エプコス アクチエンゲゼルシャフト | P-type field effect transistor and manufacturing method thereof |
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