JPS5688356A - Manufacture of memory cell - Google Patents
Manufacture of memory cellInfo
- Publication number
- JPS5688356A JPS5688356A JP16659279A JP16659279A JPS5688356A JP S5688356 A JPS5688356 A JP S5688356A JP 16659279 A JP16659279 A JP 16659279A JP 16659279 A JP16659279 A JP 16659279A JP S5688356 A JPS5688356 A JP S5688356A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- forming
- capacitor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Abstract
PURPOSE:To prevent the shortage of the channel region of a transistor by forming an Si3N4 film on a capacitor when forming a dynamic memory cell formed of a transistor and a capacitor and forming polycrystalline Si electrode only thereon. CONSTITUTION:An SiO2 film 50 is covered on a P<-> type Si substrate 10, <+>B ions are injected therethrough, and a shallow P<+> type layer 52 is formed on the surface layer of the substrate 10. Subsequently, the Si3N4 film 54 is formed only on the capacitor C forming region, is heat treated, and a thick field SiO2 film 56 raised with a layer 52 around the film 54 is formed while retaining the layer 52 under the layer 54. Thereafter, with resist film 58 formed at the end of the film 54 as a mask the film 56 is etched and removed, and a thick film 56 is retained at the end 40 of the film 50 under the film 54. Thereafter, the film 58 is removed, an Si layer is epitaxially grown on the entire surface, monocrystalline layer 36 for forming the source and drain regions are formed on the exposed substrate 10, and a polycrystalline Si electrode layer 38 which is not extended by the film 56 is formed on the film 54.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16659279A JPS5688356A (en) | 1979-12-21 | 1979-12-21 | Manufacture of memory cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16659279A JPS5688356A (en) | 1979-12-21 | 1979-12-21 | Manufacture of memory cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5688356A true JPS5688356A (en) | 1981-07-17 |
Family
ID=15834130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16659279A Pending JPS5688356A (en) | 1979-12-21 | 1979-12-21 | Manufacture of memory cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5688356A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6092658A (en) * | 1983-10-27 | 1985-05-24 | Matsushita Electronics Corp | Semiconductor memory device |
JPS6151964A (en) * | 1984-08-22 | 1986-03-14 | Nec Corp | Semiconductor device |
JPS63186464A (en) * | 1987-01-28 | 1988-08-02 | Nec Corp | Semiconductor storage device and its manufacture |
US5234859A (en) * | 1988-06-28 | 1993-08-10 | Mitsubishi Denki Kabushiki Kaisha | LOCOS type field isolating film and semiconductor memory device formed therewith |
US5728604A (en) * | 1993-08-19 | 1998-03-17 | Goldstar Electron Co., Ltd. | Method for making thin film transistors |
-
1979
- 1979-12-21 JP JP16659279A patent/JPS5688356A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6092658A (en) * | 1983-10-27 | 1985-05-24 | Matsushita Electronics Corp | Semiconductor memory device |
JPS6151964A (en) * | 1984-08-22 | 1986-03-14 | Nec Corp | Semiconductor device |
JPS63186464A (en) * | 1987-01-28 | 1988-08-02 | Nec Corp | Semiconductor storage device and its manufacture |
US5234859A (en) * | 1988-06-28 | 1993-08-10 | Mitsubishi Denki Kabushiki Kaisha | LOCOS type field isolating film and semiconductor memory device formed therewith |
US5728604A (en) * | 1993-08-19 | 1998-03-17 | Goldstar Electron Co., Ltd. | Method for making thin film transistors |
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