JPS54162973A - Manufacture of schottky junction-type field effect transistor - Google Patents
Manufacture of schottky junction-type field effect transistorInfo
- Publication number
- JPS54162973A JPS54162973A JP7234278A JP7234278A JPS54162973A JP S54162973 A JPS54162973 A JP S54162973A JP 7234278 A JP7234278 A JP 7234278A JP 7234278 A JP7234278 A JP 7234278A JP S54162973 A JPS54162973 A JP S54162973A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- source
- gate
- metal
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To increase the minimum distance between the source and the gate with reduction of its capacity by increasing the thickness of the 1st layer photosensitive resion which is coated on the semiconductor substrate, and thus improving the high frequency characteristics.
CONSTITUTION: Photosensitive resin 10 of a fixed thickness is coated on semiconductor substrate 8 on which active layer 9 is formed. Then layer 10 of the region to be the gate is removed selectively with the opening drilled. Metal 11 such as Mo or the like is then coated to form the Schottky junction with layer 9, and then low- resistance metal layer 12 such as the Au layer or the like is formed on metal 11. An photosensitive resin 13 is coated over layer 12 including the region to function as the gate. Using layer 13 as the mask, metal layer 11 and 10 are removed selectively. After this, source-drain metal layer 14 is formed to form an ohmic contact with layer 9. Thus layer 10 is increased in thickness and to increase the minimum distance between the source and the drain. As a result, the capacity can be decrease d between the source and the drain. Furthermore, the gate resistance can be reduced by thinning layer 11 and thickening layer 12 respectively.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7234278A JPS54162973A (en) | 1978-06-14 | 1978-06-14 | Manufacture of schottky junction-type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7234278A JPS54162973A (en) | 1978-06-14 | 1978-06-14 | Manufacture of schottky junction-type field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54162973A true JPS54162973A (en) | 1979-12-25 |
Family
ID=13486519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7234278A Pending JPS54162973A (en) | 1978-06-14 | 1978-06-14 | Manufacture of schottky junction-type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54162973A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57193071A (en) * | 1981-05-23 | 1982-11-27 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field effect transistor |
| US4845534A (en) * | 1981-01-30 | 1989-07-04 | Fujitsu Limited | Field effect semiconductor device |
-
1978
- 1978-06-14 JP JP7234278A patent/JPS54162973A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4845534A (en) * | 1981-01-30 | 1989-07-04 | Fujitsu Limited | Field effect semiconductor device |
| JPS57193071A (en) * | 1981-05-23 | 1982-11-27 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field effect transistor |
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