JPS54134988A - Field effect transistor of schottky barrier gate type - Google Patents
Field effect transistor of schottky barrier gate typeInfo
- Publication number
- JPS54134988A JPS54134988A JP4345478A JP4345478A JPS54134988A JP S54134988 A JPS54134988 A JP S54134988A JP 4345478 A JP4345478 A JP 4345478A JP 4345478 A JP4345478 A JP 4345478A JP S54134988 A JPS54134988 A JP S54134988A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- schottky barrier
- field effect
- effect transistor
- gate type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To improve both junction and Schottky barrier functions by providing a material layer, which sticks well to a gate junction pad part and an insulating substrate, between the both.
CONSTITUTION: A junction pad is formed on Ni7 which adheres strongly to gate junction pad 6 of Al, junction line 5 of Au and GaAs substrate 1, is relatively low in electric resistance and is small in aging variation. Onto active layer 2 formed selectively on substrate 1, ohmic-contact source and drain electrodes 3 and 4 are both provided. In the above constitution, it is prevented that Al diffuses into Au to deteriorate the sticking to GaAs, and neither characteristics nor reliability will deteriorate. A Schottky barrier type FET can therefore be obtained which is excellent both in Schottky function and is junction function.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4345478A JPS54134988A (en) | 1978-04-12 | 1978-04-12 | Field effect transistor of schottky barrier gate type |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4345478A JPS54134988A (en) | 1978-04-12 | 1978-04-12 | Field effect transistor of schottky barrier gate type |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54134988A true JPS54134988A (en) | 1979-10-19 |
Family
ID=12664140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4345478A Pending JPS54134988A (en) | 1978-04-12 | 1978-04-12 | Field effect transistor of schottky barrier gate type |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54134988A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966173A (en) * | 1982-10-08 | 1984-04-14 | Nec Corp | Semiconductor device with connecting pad |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3569796A (en) * | 1968-05-10 | 1971-03-09 | Solitron Devices | Integrated circuit contact |
JPS5128987A (en) * | 1974-09-06 | 1976-03-11 | Hitachi Shipbuilding Eng Co | KAIJOYUSOBUTSUNORIKUAGEHOHO OYOBI SOCHI |
JPS5230162A (en) * | 1975-09-03 | 1977-03-07 | Hitachi Ltd | Semiconductor device |
-
1978
- 1978-04-12 JP JP4345478A patent/JPS54134988A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3569796A (en) * | 1968-05-10 | 1971-03-09 | Solitron Devices | Integrated circuit contact |
JPS5128987A (en) * | 1974-09-06 | 1976-03-11 | Hitachi Shipbuilding Eng Co | KAIJOYUSOBUTSUNORIKUAGEHOHO OYOBI SOCHI |
JPS5230162A (en) * | 1975-09-03 | 1977-03-07 | Hitachi Ltd | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966173A (en) * | 1982-10-08 | 1984-04-14 | Nec Corp | Semiconductor device with connecting pad |
JPH0365015B2 (en) * | 1982-10-08 | 1991-10-09 |
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