JPS54134988A - Field effect transistor of schottky barrier gate type - Google Patents

Field effect transistor of schottky barrier gate type

Info

Publication number
JPS54134988A
JPS54134988A JP4345478A JP4345478A JPS54134988A JP S54134988 A JPS54134988 A JP S54134988A JP 4345478 A JP4345478 A JP 4345478A JP 4345478 A JP4345478 A JP 4345478A JP S54134988 A JPS54134988 A JP S54134988A
Authority
JP
Japan
Prior art keywords
junction
schottky barrier
field effect
effect transistor
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4345478A
Other languages
Japanese (ja)
Inventor
Michihiro Kobiki
Manabu Watase
Masaaki Nakatani
Saburo Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4345478A priority Critical patent/JPS54134988A/en
Publication of JPS54134988A publication Critical patent/JPS54134988A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve both junction and Schottky barrier functions by providing a material layer, which sticks well to a gate junction pad part and an insulating substrate, between the both.
CONSTITUTION: A junction pad is formed on Ni7 which adheres strongly to gate junction pad 6 of Al, junction line 5 of Au and GaAs substrate 1, is relatively low in electric resistance and is small in aging variation. Onto active layer 2 formed selectively on substrate 1, ohmic-contact source and drain electrodes 3 and 4 are both provided. In the above constitution, it is prevented that Al diffuses into Au to deteriorate the sticking to GaAs, and neither characteristics nor reliability will deteriorate. A Schottky barrier type FET can therefore be obtained which is excellent both in Schottky function and is junction function.
COPYRIGHT: (C)1979,JPO&Japio
JP4345478A 1978-04-12 1978-04-12 Field effect transistor of schottky barrier gate type Pending JPS54134988A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4345478A JPS54134988A (en) 1978-04-12 1978-04-12 Field effect transistor of schottky barrier gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4345478A JPS54134988A (en) 1978-04-12 1978-04-12 Field effect transistor of schottky barrier gate type

Publications (1)

Publication Number Publication Date
JPS54134988A true JPS54134988A (en) 1979-10-19

Family

ID=12664140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4345478A Pending JPS54134988A (en) 1978-04-12 1978-04-12 Field effect transistor of schottky barrier gate type

Country Status (1)

Country Link
JP (1) JPS54134988A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966173A (en) * 1982-10-08 1984-04-14 Nec Corp Semiconductor device with connecting pad

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3569796A (en) * 1968-05-10 1971-03-09 Solitron Devices Integrated circuit contact
JPS5128987A (en) * 1974-09-06 1976-03-11 Hitachi Shipbuilding Eng Co KAIJOYUSOBUTSUNORIKUAGEHOHO OYOBI SOCHI
JPS5230162A (en) * 1975-09-03 1977-03-07 Hitachi Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3569796A (en) * 1968-05-10 1971-03-09 Solitron Devices Integrated circuit contact
JPS5128987A (en) * 1974-09-06 1976-03-11 Hitachi Shipbuilding Eng Co KAIJOYUSOBUTSUNORIKUAGEHOHO OYOBI SOCHI
JPS5230162A (en) * 1975-09-03 1977-03-07 Hitachi Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966173A (en) * 1982-10-08 1984-04-14 Nec Corp Semiconductor device with connecting pad
JPH0365015B2 (en) * 1982-10-08 1991-10-09

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