JPS54101285A - Dual gate field effect transistor - Google Patents
Dual gate field effect transistorInfo
- Publication number
- JPS54101285A JPS54101285A JP796878A JP796878A JPS54101285A JP S54101285 A JPS54101285 A JP S54101285A JP 796878 A JP796878 A JP 796878A JP 796878 A JP796878 A JP 796878A JP S54101285 A JPS54101285 A JP S54101285A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- ground
- field effect
- effect transistor
- dual gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain high gain, by reducing the inductance between the second gate and ground, through taking the bonding conductor for the second gate and ground as metallic thin layer, in dual gate FET.
CONSTITUTION: The transistor consists of the semi-insulating substrate 15,-conduction type semiconductor layer 16 provided on the substrate, source electrode 17 and drain electrode 18 provided on the n type semiconductor layer, and the first gate 21 and the second gate 22, and the second gate and the source electrode are connected on the same piece with metallic thin layer. Thus, the inductance between the second gate and ground can almost be neglected. Accordingly, high gain can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP796878A JPS54101285A (en) | 1978-01-26 | 1978-01-26 | Dual gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP796878A JPS54101285A (en) | 1978-01-26 | 1978-01-26 | Dual gate field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54101285A true JPS54101285A (en) | 1979-08-09 |
Family
ID=11680253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP796878A Pending JPS54101285A (en) | 1978-01-26 | 1978-01-26 | Dual gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54101285A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4486767A (en) * | 1980-06-06 | 1984-12-04 | Thomson-Csf | Bipolar element having a non-linear conductivity characteristic, and commutating device incorporating the same |
JPS62194681A (en) * | 1986-02-20 | 1987-08-27 | Mitsubishi Electric Corp | Semiconductor device |
US4870478A (en) * | 1988-04-21 | 1989-09-26 | Motorola, Inc. | Dual-gate gallium arsenide power metal semiconductor field effect transistor |
-
1978
- 1978-01-26 JP JP796878A patent/JPS54101285A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4486767A (en) * | 1980-06-06 | 1984-12-04 | Thomson-Csf | Bipolar element having a non-linear conductivity characteristic, and commutating device incorporating the same |
JPS62194681A (en) * | 1986-02-20 | 1987-08-27 | Mitsubishi Electric Corp | Semiconductor device |
US4870478A (en) * | 1988-04-21 | 1989-09-26 | Motorola, Inc. | Dual-gate gallium arsenide power metal semiconductor field effect transistor |
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