JPS54101285A - Dual gate field effect transistor - Google Patents

Dual gate field effect transistor

Info

Publication number
JPS54101285A
JPS54101285A JP796878A JP796878A JPS54101285A JP S54101285 A JPS54101285 A JP S54101285A JP 796878 A JP796878 A JP 796878A JP 796878 A JP796878 A JP 796878A JP S54101285 A JPS54101285 A JP S54101285A
Authority
JP
Japan
Prior art keywords
gate
ground
field effect
effect transistor
dual gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP796878A
Other languages
Japanese (ja)
Inventor
Makoto Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP796878A priority Critical patent/JPS54101285A/en
Publication of JPS54101285A publication Critical patent/JPS54101285A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain high gain, by reducing the inductance between the second gate and ground, through taking the bonding conductor for the second gate and ground as metallic thin layer, in dual gate FET.
CONSTITUTION: The transistor consists of the semi-insulating substrate 15,-conduction type semiconductor layer 16 provided on the substrate, source electrode 17 and drain electrode 18 provided on the n type semiconductor layer, and the first gate 21 and the second gate 22, and the second gate and the source electrode are connected on the same piece with metallic thin layer. Thus, the inductance between the second gate and ground can almost be neglected. Accordingly, high gain can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP796878A 1978-01-26 1978-01-26 Dual gate field effect transistor Pending JPS54101285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP796878A JPS54101285A (en) 1978-01-26 1978-01-26 Dual gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP796878A JPS54101285A (en) 1978-01-26 1978-01-26 Dual gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS54101285A true JPS54101285A (en) 1979-08-09

Family

ID=11680253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP796878A Pending JPS54101285A (en) 1978-01-26 1978-01-26 Dual gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS54101285A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486767A (en) * 1980-06-06 1984-12-04 Thomson-Csf Bipolar element having a non-linear conductivity characteristic, and commutating device incorporating the same
JPS62194681A (en) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp Semiconductor device
US4870478A (en) * 1988-04-21 1989-09-26 Motorola, Inc. Dual-gate gallium arsenide power metal semiconductor field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486767A (en) * 1980-06-06 1984-12-04 Thomson-Csf Bipolar element having a non-linear conductivity characteristic, and commutating device incorporating the same
JPS62194681A (en) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp Semiconductor device
US4870478A (en) * 1988-04-21 1989-09-26 Motorola, Inc. Dual-gate gallium arsenide power metal semiconductor field effect transistor

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