JPS57164573A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57164573A
JPS57164573A JP2902782A JP2902782A JPS57164573A JP S57164573 A JPS57164573 A JP S57164573A JP 2902782 A JP2902782 A JP 2902782A JP 2902782 A JP2902782 A JP 2902782A JP S57164573 A JPS57164573 A JP S57164573A
Authority
JP
Japan
Prior art keywords
layer
impurity
semiconductor device
molecular beam
essentially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2902782A
Other languages
Japanese (ja)
Other versions
JPH0330309B2 (en
Inventor
Juichi Shimada
Yasuhiro Shiraki
Keisuke Kobayashi
Yoshifumi Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2902782A priority Critical patent/JPS57164573A/en
Publication of JPS57164573A publication Critical patent/JPS57164573A/en
Publication of JPH0330309B2 publication Critical patent/JPH0330309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To enhance the mobility of a semiconductor device, by providing the first semiconductor layer essentially containing no impurity and the means to control carriers in the second semiconductor layer adjoining thereto and containing impurity and in the first layer. CONSTITUTION:An Si layer 42 of approx. 1mum is grown epitaxially with molecular beam on an Si substrate 41. Next, the Si layer 43 containing B and the Si layer 44 with the thickness of 1,000Angstrom essentially no containing impurity are successively grown epitaxially with molecular beam to successively form source and drain region 55, gate oxide film 56 and gate electrode 57. Thus, carriers are not subject to impurity scattering for high mobility allowing the FET to be short channelized.
JP2902782A 1982-02-26 1982-02-26 Semiconductor device Granted JPS57164573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2902782A JPS57164573A (en) 1982-02-26 1982-02-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2902782A JPS57164573A (en) 1982-02-26 1982-02-26 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP966277A Division JPS5915388B2 (en) 1977-02-02 1977-02-02 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS57164573A true JPS57164573A (en) 1982-10-09
JPH0330309B2 JPH0330309B2 (en) 1991-04-26

Family

ID=12264923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2902782A Granted JPS57164573A (en) 1982-02-26 1982-02-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57164573A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607121A (en) * 1983-06-24 1985-01-14 Nec Corp Structure of super lattice
JPS6052067A (en) * 1983-08-31 1985-03-23 Nec Corp Structure of super lattice
JPS61216316A (en) * 1985-02-22 1986-09-26 Fujitsu Ltd Manufacture of semiconductor device
US4675711A (en) * 1984-12-18 1987-06-23 International Business Machines Corporation Low temperature tunneling transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395571A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395571A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607121A (en) * 1983-06-24 1985-01-14 Nec Corp Structure of super lattice
JPH0315334B2 (en) * 1983-06-24 1991-02-28 Nippon Electric Co
JPS6052067A (en) * 1983-08-31 1985-03-23 Nec Corp Structure of super lattice
JPH037139B2 (en) * 1983-08-31 1991-01-31 Nippon Electric Co
US4675711A (en) * 1984-12-18 1987-06-23 International Business Machines Corporation Low temperature tunneling transistor
JPS61216316A (en) * 1985-02-22 1986-09-26 Fujitsu Ltd Manufacture of semiconductor device
JPH0318733B2 (en) * 1985-02-22 1991-03-13 Fujitsu Ltd

Also Published As

Publication number Publication date
JPH0330309B2 (en) 1991-04-26

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