JPS6482566A - Field-effect semiconductor device - Google Patents
Field-effect semiconductor deviceInfo
- Publication number
- JPS6482566A JPS6482566A JP62241840A JP24184087A JPS6482566A JP S6482566 A JPS6482566 A JP S6482566A JP 62241840 A JP62241840 A JP 62241840A JP 24184087 A JP24184087 A JP 24184087A JP S6482566 A JPS6482566 A JP S6482566A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- resistance
- substrate
- impurity
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To reduce ON resistance, by forming a second conductivity type epitaxial layer of high resistance on a second conductivity type substrate of low resistance using phosphorus and the like as impurity, constituting a gentle concentration distribution of impurity between the substrate and the epitaxial layer, and making the thickness of the epitaxial layer sufficiently thin. CONSTITUTION:For a second conductivity type substrate 11 of low resistance, phosphorus as impurity, which largely protrudes in a second conductivity type epitaxial layer 22 of high resistance, is used. The substrate 11 is made to largely protrude in the epitaxial layer 22, and a protruding part 12 is formed to constitute a gentle impurity concentration distribution between the substrate 11 and the epitaxial layer 22. Breakdown voltage is maintained by the gradient of impurity concentration distribution, and the thickness of the epitaxial layer 22 is sufficiently thinned. Thus resistance REpi is reduced, so that the ON resistance Ron can be sufficiently reduced.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62241840A JPS6482566A (en) | 1987-09-24 | 1987-09-24 | Field-effect semiconductor device |
EP88111722A EP0308612B1 (en) | 1987-09-24 | 1988-07-20 | Field effect transistor and manufacturing method thereof |
DE3851815T DE3851815T2 (en) | 1987-09-24 | 1988-07-20 | Field effect transistor and its manufacturing method. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62241840A JPS6482566A (en) | 1987-09-24 | 1987-09-24 | Field-effect semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6482566A true JPS6482566A (en) | 1989-03-28 |
Family
ID=17080281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62241840A Pending JPS6482566A (en) | 1987-09-24 | 1987-09-24 | Field-effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6482566A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0661497A (en) * | 1992-08-05 | 1994-03-04 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
US6452219B1 (en) | 1996-09-11 | 2002-09-17 | Denso Corporation | Insulated gate bipolar transistor and method of fabricating the same |
JP2009188177A (en) * | 2008-02-06 | 2009-08-20 | Fuji Electric Device Technology Co Ltd | Semiconductor element, and method of manufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5742164A (en) * | 1980-08-27 | 1982-03-09 | Hitachi Ltd | Semiconductor device |
JPS57153469A (en) * | 1981-03-18 | 1982-09-22 | Toshiba Corp | Insulated gate type field effect transistor |
-
1987
- 1987-09-24 JP JP62241840A patent/JPS6482566A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5742164A (en) * | 1980-08-27 | 1982-03-09 | Hitachi Ltd | Semiconductor device |
JPS57153469A (en) * | 1981-03-18 | 1982-09-22 | Toshiba Corp | Insulated gate type field effect transistor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0661497A (en) * | 1992-08-05 | 1994-03-04 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
US6452219B1 (en) | 1996-09-11 | 2002-09-17 | Denso Corporation | Insulated gate bipolar transistor and method of fabricating the same |
JP2009188177A (en) * | 2008-02-06 | 2009-08-20 | Fuji Electric Device Technology Co Ltd | Semiconductor element, and method of manufacturing the same |
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