JPS5688368A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5688368A
JPS5688368A JP16600779A JP16600779A JPS5688368A JP S5688368 A JPS5688368 A JP S5688368A JP 16600779 A JP16600779 A JP 16600779A JP 16600779 A JP16600779 A JP 16600779A JP S5688368 A JPS5688368 A JP S5688368A
Authority
JP
Japan
Prior art keywords
region
type
gate
drain
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16600779A
Other languages
Japanese (ja)
Inventor
Goro Mitarai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16600779A priority Critical patent/JPS5688368A/en
Publication of JPS5688368A publication Critical patent/JPS5688368A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors

Abstract

PURPOSE:To obtain high withstand voltage of a field effect transistor by using a semiconductor substrate normally used as a lower gate region as a drain region in a J-FET having upper and lower gate regions and defining the withstand voltage between the gate and the drain by an isolating region formed on the substrate. CONSTITUTION:An n type Si substrate 21 normally used as a lower gate region is used as a drain region, and a plurality of p type lower gate regions 22 are diffused on the surface thereof. Then, an n type layer 23 is epitaxially grown on the entire surface including the region 22, is formed to be insular by a p type region 24 reaching the substrate 21, a p type connecting region 27 connected to the region 22 is diffused therein, and a p type upper gate region 25 is formed in the layer 23 while contacting therewith. Thereafter, an n type source region 28 is diffused at the position between the regions 25, a source electrode 29 is mounted on the region 28, a gate electrode 31 is mounted on the region 24, and a drain electrode 30 is mounted on the back surface of the substrate. Thus, the withstand voltage between the gate and the drain can be specified in the isolating region 24, higher than 100V.
JP16600779A 1979-12-19 1979-12-19 Field effect transistor Pending JPS5688368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16600779A JPS5688368A (en) 1979-12-19 1979-12-19 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16600779A JPS5688368A (en) 1979-12-19 1979-12-19 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS5688368A true JPS5688368A (en) 1981-07-17

Family

ID=15823151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16600779A Pending JPS5688368A (en) 1979-12-19 1979-12-19 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5688368A (en)

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