JPS57126162A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57126162A
JPS57126162A JP56012094A JP1209481A JPS57126162A JP S57126162 A JPS57126162 A JP S57126162A JP 56012094 A JP56012094 A JP 56012094A JP 1209481 A JP1209481 A JP 1209481A JP S57126162 A JPS57126162 A JP S57126162A
Authority
JP
Japan
Prior art keywords
region
layer
type
regions
conductive semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56012094A
Other languages
Japanese (ja)
Inventor
Hiroshi Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56012094A priority Critical patent/JPS57126162A/en
Priority to EP19820300367 priority patent/EP0057549B1/en
Priority to DE8282300367T priority patent/DE3276888D1/en
Publication of JPS57126162A publication Critical patent/JPS57126162A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To make bi-polar transistors of high withstand voltage and of high speed and an I<2>L element to coexist on the same substrate by a method wherein the second conductive semiconductor layer is provided on the first conductive semiconductor layer, and those are connected by a semiconductor region having concentration of impurities being the same with or lower than the second conductive semiconductor layer. CONSTITUTION:An n<+> type buried region 106 is formed by diffusion bringing close to the end part of a p<-> type Si substrate 101, and a p<-> type layer 105 is made to grow epitaxially on the whole surface containing the region thereof. Then an n<+> type buried regions 1171, 1172 are formed by diffusion in the layer 105 adjoining to the region 106, an n<-> type layer 115 to constitute a common collector region is made to grow epitaxially on the whole surface, and the buried regions 106, 1171, 1172 are all isolated between elements by a p<+> type region 119 to enter into the layer 105. After then, the layer 115 on the region 106 is used for the high voltage withstand bi-polar transistor region, the layer 115 on the region 1171 is used for the high speed bi-polar transistor region, and the layer 115 on the region 1172 is used for the I<2>L element respectively, and the regions of base, emitter, etc., are formed respectively in those regions.
JP56012094A 1981-01-29 1981-01-29 Semiconductor device Pending JPS57126162A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56012094A JPS57126162A (en) 1981-01-29 1981-01-29 Semiconductor device
EP19820300367 EP0057549B1 (en) 1981-01-29 1982-01-25 Semiconductor device
DE8282300367T DE3276888D1 (en) 1981-01-29 1982-01-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56012094A JPS57126162A (en) 1981-01-29 1981-01-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57126162A true JPS57126162A (en) 1982-08-05

Family

ID=11795980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56012094A Pending JPS57126162A (en) 1981-01-29 1981-01-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57126162A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166071A (en) * 1985-01-17 1986-07-26 Toshiba Corp Semiconductor device and manufacture thereof
JPH0196955A (en) * 1987-10-09 1989-04-14 Hitachi Ltd Semiconductor device and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153365A (en) * 1979-05-17 1980-11-29 Toshiba Corp Manufacturing method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153365A (en) * 1979-05-17 1980-11-29 Toshiba Corp Manufacturing method of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166071A (en) * 1985-01-17 1986-07-26 Toshiba Corp Semiconductor device and manufacture thereof
JPH0196955A (en) * 1987-10-09 1989-04-14 Hitachi Ltd Semiconductor device and manufacture thereof

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