JPS57162464A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57162464A
JPS57162464A JP4744181A JP4744181A JPS57162464A JP S57162464 A JPS57162464 A JP S57162464A JP 4744181 A JP4744181 A JP 4744181A JP 4744181 A JP4744181 A JP 4744181A JP S57162464 A JPS57162464 A JP S57162464A
Authority
JP
Japan
Prior art keywords
layer
type
channel
diffusion
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4744181A
Other languages
Japanese (ja)
Inventor
Yoshiyasu Sugano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4744181A priority Critical patent/JPS57162464A/en
Publication of JPS57162464A publication Critical patent/JPS57162464A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To reduce the lateral directional resistance component of a channel layer, and to suppress parasitic bipolar transistor operation of a semiconductor device by a method wherein a buried layer of reverse conductive type high impurity concentration is provided in a semiconductor substrate, and the nighborhood of the channel part of a channel layer and the channel contact region are connected through the buried layer. CONSTITUTION:The P type buried layer 22 is formed by diffusion in the N type Si substrat 21, an N type layer 21' is made to grow epitaxially on the whole surface containing the buried layer, the P<+> type channel contact region 4 is formed by diffusion extending from the surface of the layer thereof to the end part of the layer 22 making the bottom part to stop in the layer 22, and the region 4 and the layer 22 are connected in the inside of the substrate 21. Then the unnecessitating part of an SiO2 film7 generated at this time is removed, a gate oxide film 5 and a polycrystalline Si layer 6 are pilled up being laminated, an opening 23 is formed corresponding to the layer 22, the P type channel layer 2 to enter into the layer 22 is formed by diffusion, and the channel layer is bridged to the region 4. After then, an N type source region 3 is formed by diffusion in the layer 2.
JP4744181A 1981-03-31 1981-03-31 Semiconductor device Pending JPS57162464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4744181A JPS57162464A (en) 1981-03-31 1981-03-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4744181A JPS57162464A (en) 1981-03-31 1981-03-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57162464A true JPS57162464A (en) 1982-10-06

Family

ID=12775225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4744181A Pending JPS57162464A (en) 1981-03-31 1981-03-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57162464A (en)

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