JPS5710268A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5710268A
JPS5710268A JP16609380A JP16609380A JPS5710268A JP S5710268 A JPS5710268 A JP S5710268A JP 16609380 A JP16609380 A JP 16609380A JP 16609380 A JP16609380 A JP 16609380A JP S5710268 A JPS5710268 A JP S5710268A
Authority
JP
Japan
Prior art keywords
substrate
layer
oxide films
type
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16609380A
Other languages
Japanese (ja)
Inventor
Hirohiko Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16609380A priority Critical patent/JPS5710268A/en
Publication of JPS5710268A publication Critical patent/JPS5710268A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enhance the speed of an FET by a method wherein a semiconductor layer is made to grow on a substrate being formed oxide films selectively therein and being leveled, a channel region and parts of source and drain regions are provided in the monocrystalline region of the growth layer, and lead out electrodes and wirings are provided in polycrystalline regions. CONSTITUTION:The thick oxide films 6 are provided selectively on the N type Si substrate 2 excluding the channel region 1 of the FET and its neighborhood, and after the surface thereof is etched to level, an N type Si layer is made to grow to form the upper part of the crystal of the substrate as a monocrystalline layer 10. Then P type diffusion layers 3-5 are formed as to be extended over polycrystalline growth layers 11 on the oxide films 6 using the channel region as a mask. Interlayer films and a gate film are formed in succession, and after contact holes are provided, a gate electrode 19, a source electrode 18, a drain electrode 20, wirings between elements 21, 22 consisted of Al, for example, are formed to constitute the P channel MOSIC. Accordingly electrostatic capacity of the P type diffusion layer to the substrate can be reduced, and because gm also can be reduced, high speed can be attained. Moreover the structure of the substrate being buried with the oxide films 6 can be made as suitable also for a junction type FET.
JP16609380A 1980-11-25 1980-11-25 Semiconductor device Pending JPS5710268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16609380A JPS5710268A (en) 1980-11-25 1980-11-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16609380A JPS5710268A (en) 1980-11-25 1980-11-25 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4211971A Division JPS555704B1 (en) 1971-06-15 1971-06-15

Publications (1)

Publication Number Publication Date
JPS5710268A true JPS5710268A (en) 1982-01-19

Family

ID=15824861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16609380A Pending JPS5710268A (en) 1980-11-25 1980-11-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710268A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477159A (en) * 1987-09-18 1989-03-23 Toshiba Corp Semiconductor device and manufacture thereof
US5151759A (en) * 1989-03-02 1992-09-29 Thunderbird Technologies, Inc. Fermi threshold silicon-on-insulator field effect transistor
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477159A (en) * 1987-09-18 1989-03-23 Toshiba Corp Semiconductor device and manufacture thereof
US5151759A (en) * 1989-03-02 1992-09-29 Thunderbird Technologies, Inc. Fermi threshold silicon-on-insulator field effect transistor
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
US5367186A (en) * 1992-01-28 1994-11-22 Thunderbird Technologies, Inc. Bounded tub fermi threshold field effect transistor
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US5374836A (en) * 1992-01-28 1994-12-20 Thunderbird Technologies, Inc. High current fermi threshold field effect transistor
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors

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