JPS54140484A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS54140484A JPS54140484A JP4775978A JP4775978A JPS54140484A JP S54140484 A JPS54140484 A JP S54140484A JP 4775978 A JP4775978 A JP 4775978A JP 4775978 A JP4775978 A JP 4775978A JP S54140484 A JPS54140484 A JP S54140484A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- diffusion
- base
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To increase hFE without lowering the dielectric strength of the inverse transistor by forming the base of the inverse transistor in I<2>L circuit in the process regardless of the bases of the bipolar transistor. CONSTITUTION:N<+>-type buried region 2 is formed by diffusion on P-type Si substrate 1, and N<->-type layer 3 is epitaxial-grown on the entire surface. Then P<+>-type isolation region 4 reaching substrate 1 is formed by diffusion, and layer 3 is isolated into region 3a for the I<2>L circuit and region 3b for the bipolar transistor each. Then P-type injector region 7, P-type base electrode draw-out region 8, N-type channel stopper region 11 and P<->-type base region 12 are formed each by diffusion within region 3a. while N<+>-type collector electrode draw-out region 10, P-type base region 6 and N<+>-type emitter region 9 within region 6 are formed by diffusion within region 3b respectively. After this, the opening is drilled to grown SiO2 film 5, and N<->-type collector region 14 touching film 5 is coated by the epitaxial growth on region 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4775978A JPS54140484A (en) | 1978-04-24 | 1978-04-24 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4775978A JPS54140484A (en) | 1978-04-24 | 1978-04-24 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54140484A true JPS54140484A (en) | 1979-10-31 |
Family
ID=12784285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4775978A Pending JPS54140484A (en) | 1978-04-24 | 1978-04-24 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54140484A (en) |
-
1978
- 1978-04-24 JP JP4775978A patent/JPS54140484A/en active Pending
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