JPS54106175A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54106175A JPS54106175A JP1386678A JP1386678A JPS54106175A JP S54106175 A JPS54106175 A JP S54106175A JP 1386678 A JP1386678 A JP 1386678A JP 1386678 A JP1386678 A JP 1386678A JP S54106175 A JPS54106175 A JP S54106175A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- poly
- drilled
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To reduce the space between the emitter and the base and thus to enhance the high frequency characteristics for the high frequency transistor featuring the doped poly silicon structure by using the coarse pattern for etching of the poly- crystal Si layer and the fine pattern for etching of the Al electrode respectively.
CONSTITUTION: N--type layer 2 is epitaxial-grown on N+-type Si substrate 1 and covered with SiO2 film 4 with opening 3 drilled and to form two P+-type regions 5 to feature the graft base structure. Then opening 6 is drilled covering over two regions 5 including the SiO2 film grown then, and then shallow P-type base region 7 between these regions. After this, the entire surface is covered with SiO2 film 8 with opening 9 and 10 drilled, and then poly-crystal Si layer 11 and N-type poly-crystal Si layer 12 are laminated and grown on the entire surface. Then mask pattern 17 is provided to form shallow N-type emitter region 14 within region 7 through diffusion and with use of the coarse pattern for the mask. Then the fine pattern is used to form Al base and emitter electrodes 15 and 16.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1386678A JPS54106175A (en) | 1978-02-09 | 1978-02-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1386678A JPS54106175A (en) | 1978-02-09 | 1978-02-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54106175A true JPS54106175A (en) | 1979-08-20 |
Family
ID=11845158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1386678A Pending JPS54106175A (en) | 1978-02-09 | 1978-02-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54106175A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5094964A (en) * | 1989-05-02 | 1992-03-10 | Kabushiki Kaisha Toshiba | Method for manufacturing a bipolar semiconductor device |
-
1978
- 1978-02-09 JP JP1386678A patent/JPS54106175A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5094964A (en) * | 1989-05-02 | 1992-03-10 | Kabushiki Kaisha Toshiba | Method for manufacturing a bipolar semiconductor device |
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