JPS54154280A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54154280A
JPS54154280A JP6234478A JP6234478A JPS54154280A JP S54154280 A JPS54154280 A JP S54154280A JP 6234478 A JP6234478 A JP 6234478A JP 6234478 A JP6234478 A JP 6234478A JP S54154280 A JPS54154280 A JP S54154280A
Authority
JP
Japan
Prior art keywords
region
base
type
layer
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6234478A
Other languages
Japanese (ja)
Inventor
Seiichiro Ogiwara
Takashi Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6234478A priority Critical patent/JPS54154280A/en
Publication of JPS54154280A publication Critical patent/JPS54154280A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase current amplification factor hFE by increasing the parasitic resistance in case the semiconductor device is formed through the Darlington connection between two units of transistors which share one semiconductor layer as the base. CONSTITUTION:N<->-type layer 2 is epitaxial-grown on N<+>-type Si substrate 1, and P-type region 3 to be the common base is formed by diffusion within layer 2 to be then divided with groove 5 filled up with plural units of glass. Then the surface of divided region 3 is covered with SiO2 film 6 with an opening drilled, and N<+>-type region 4a, 4b and 4c are formed into a ring shape each by diffusion within region 3 of one side, region 3 of the other side and inside region 4b respectively. Thus, region 4a, 4b and 4c are used as the emitter of input-step transistor Q1, the region for formation of the pinch resistance and the emitter of output-step transistor Q2 respectively. As a result, the current flowing from the base of Q1 to the base of Q2 is decreased by region 4b, thus increasing current amplification factor hFE.
JP6234478A 1978-05-26 1978-05-26 Semiconductor device Pending JPS54154280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6234478A JPS54154280A (en) 1978-05-26 1978-05-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6234478A JPS54154280A (en) 1978-05-26 1978-05-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54154280A true JPS54154280A (en) 1979-12-05

Family

ID=13197404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6234478A Pending JPS54154280A (en) 1978-05-26 1978-05-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54154280A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
JPS6276546U (en) * 1985-10-31 1987-05-16

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212552A (en) * 1975-07-21 1977-01-31 Hitachi Ltd Single band wave signal oscillating circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5212552A (en) * 1975-07-21 1977-01-31 Hitachi Ltd Single band wave signal oscillating circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
JPS6276546U (en) * 1985-10-31 1987-05-16

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