JPS55134966A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55134966A
JPS55134966A JP4331479A JP4331479A JPS55134966A JP S55134966 A JPS55134966 A JP S55134966A JP 4331479 A JP4331479 A JP 4331479A JP 4331479 A JP4331479 A JP 4331479A JP S55134966 A JPS55134966 A JP S55134966A
Authority
JP
Japan
Prior art keywords
layer
emitter
transistor
collector
acts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4331479A
Other languages
Japanese (ja)
Inventor
Satoshi Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP4331479A priority Critical patent/JPS55134966A/en
Publication of JPS55134966A publication Critical patent/JPS55134966A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve common-base current transfer ratio by forming the emitter of a lateral bipolar transistor at the bottom of a concave part. CONSTITUTION:A collector C is formed on an n<->-epitaxial layer 2 located on an n<+>-type substrate or a buried layer as in the usual way. An emitter E is formed at the bottom of a V-shaped concave part 3 provided on the layer 2. A lateral pnp- transistor is formed by E, C and n<+>-layer B and a static induction transistor (SIT) is formed by a drain and a gate which also acts as collector C and a source which also acts as base B. By this composition, the epitaxial layer 2 between the layer E and B will become thin and the reflection amount by the substrate or buried layer 1 for the carriers emitted from the emitter will be increased. Therefore, the common-base current transfer ratio is also increased.
JP4331479A 1979-04-10 1979-04-10 Semiconductor device Pending JPS55134966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4331479A JPS55134966A (en) 1979-04-10 1979-04-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4331479A JPS55134966A (en) 1979-04-10 1979-04-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55134966A true JPS55134966A (en) 1980-10-21

Family

ID=12660336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4331479A Pending JPS55134966A (en) 1979-04-10 1979-04-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55134966A (en)

Similar Documents

Publication Publication Date Title
JPS55134966A (en) Semiconductor device
JPS57162365A (en) Semiconductor device
JPS54105977A (en) Semiconductor device
JPS56108255A (en) Semiconductor integrated circuit
JPS5778171A (en) Thyristor
JPS5762552A (en) Manufacture of semiconductor device
JPS55103756A (en) Electrostatic induction transistor integrated circuit
JPS5745274A (en) Semiconductor device
JPS5683968A (en) Semiconductor integrated circuit device
JPS56100460A (en) Bipolar mos semiconductor device and manufacture thereof
JPS5788769A (en) Semiconductor device
JPS57178363A (en) Lateral pnp transistor and manufacture thereof
JPS5667970A (en) Gate turn-off thyristor
JPS54154280A (en) Semiconductor device
JPS5538080A (en) Semiconductor device
JPS5710964A (en) Manufacture of semiconductor device
JPS5648167A (en) Semiconductor device
JPS57162361A (en) Manufacture of semiconductor integrated circuit
JPS57143855A (en) Semiconductor integrated circuit device
JPS5563862A (en) Semiconductor logic circuit
JPS5787168A (en) Semiconductor device
JPS575358A (en) Semiconductor device and manufacture thereof
JPS5585056A (en) Semiconductor device and its preparation
JPS5678152A (en) Semiconductor integrated circuit device and manufacture thereof
JPS56152258A (en) Bipolar transistor and semiconductor integrated circuit device having mis type fet