JPS55134966A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55134966A JPS55134966A JP4331479A JP4331479A JPS55134966A JP S55134966 A JPS55134966 A JP S55134966A JP 4331479 A JP4331479 A JP 4331479A JP 4331479 A JP4331479 A JP 4331479A JP S55134966 A JPS55134966 A JP S55134966A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitter
- transistor
- collector
- acts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To improve common-base current transfer ratio by forming the emitter of a lateral bipolar transistor at the bottom of a concave part. CONSTITUTION:A collector C is formed on an n<->-epitaxial layer 2 located on an n<+>-type substrate or a buried layer as in the usual way. An emitter E is formed at the bottom of a V-shaped concave part 3 provided on the layer 2. A lateral pnp- transistor is formed by E, C and n<+>-layer B and a static induction transistor (SIT) is formed by a drain and a gate which also acts as collector C and a source which also acts as base B. By this composition, the epitaxial layer 2 between the layer E and B will become thin and the reflection amount by the substrate or buried layer 1 for the carriers emitted from the emitter will be increased. Therefore, the common-base current transfer ratio is also increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4331479A JPS55134966A (en) | 1979-04-10 | 1979-04-10 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4331479A JPS55134966A (en) | 1979-04-10 | 1979-04-10 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55134966A true JPS55134966A (en) | 1980-10-21 |
Family
ID=12660336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4331479A Pending JPS55134966A (en) | 1979-04-10 | 1979-04-10 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55134966A (en) |
-
1979
- 1979-04-10 JP JP4331479A patent/JPS55134966A/en active Pending
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