JPS56152258A - Bipolar transistor and semiconductor integrated circuit device having mis type fet - Google Patents

Bipolar transistor and semiconductor integrated circuit device having mis type fet

Info

Publication number
JPS56152258A
JPS56152258A JP5414880A JP5414880A JPS56152258A JP S56152258 A JPS56152258 A JP S56152258A JP 5414880 A JP5414880 A JP 5414880A JP 5414880 A JP5414880 A JP 5414880A JP S56152258 A JPS56152258 A JP S56152258A
Authority
JP
Japan
Prior art keywords
layer
type
substrate
transistor
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5414880A
Other languages
Japanese (ja)
Inventor
Toshihiro Matsuda
Toshinori Hirashima
Norio Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5414880A priority Critical patent/JPS56152258A/en
Publication of JPS56152258A publication Critical patent/JPS56152258A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To contrive the integration of a high dielectric strength transistor by providing a p well region becoming a base in an n type epitaxial layer formed by occupying a part of the layer by an n<+> buried layer on a p type substrate wherein an n<+> emitter is provided in the p well region to compose an n-p-n transistor and a CMIS is composed in the remaining part of the n type epitaxial layer on the substrate. CONSTITUTION:An n type epitaxialy layer 12 is formed on a p type Si substrate by occupying a part of the layer 12 by an n<+> buried layer 13 and a p type isolation layer 14 connecting to the p type substrate is formed at a part of the surface of the n type epitaxial layer and p type wells 15, 16 extending to the upper part of the buried layer 13 and that of the substrate respectively are formed at the remaining part of the layer 12 to form an n-p-n transistor consisting the p type well 15 as a base on the surface of the semiconductor layer 12a on the n<+> buried layer. And a p-channel MOSFET is formed on the surface of an n type semiconductor layer 12b locating at the upper part of the substrate having no buried layer and an n-channel MOSFET is formed on the surface of the n type well 16. In this way, a bipolar transistor providing a high dielectric strength n-p-n transistor and a semiconductor integrating circuit having an MLSFET can be obtained.
JP5414880A 1980-04-25 1980-04-25 Bipolar transistor and semiconductor integrated circuit device having mis type fet Pending JPS56152258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5414880A JPS56152258A (en) 1980-04-25 1980-04-25 Bipolar transistor and semiconductor integrated circuit device having mis type fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5414880A JPS56152258A (en) 1980-04-25 1980-04-25 Bipolar transistor and semiconductor integrated circuit device having mis type fet

Publications (1)

Publication Number Publication Date
JPS56152258A true JPS56152258A (en) 1981-11-25

Family

ID=12962460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5414880A Pending JPS56152258A (en) 1980-04-25 1980-04-25 Bipolar transistor and semiconductor integrated circuit device having mis type fet

Country Status (1)

Country Link
JP (1) JPS56152258A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01184947A (en) * 1988-01-20 1989-07-24 Sanyo Electric Co Ltd Semiconductor integrated circuit and manufacture thereof
JP2012244098A (en) * 2011-05-24 2012-12-10 Semiconductor Components Industries Llc Semiconductor device and manufacturing method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01184947A (en) * 1988-01-20 1989-07-24 Sanyo Electric Co Ltd Semiconductor integrated circuit and manufacture thereof
JP2012244098A (en) * 2011-05-24 2012-12-10 Semiconductor Components Industries Llc Semiconductor device and manufacturing method of the same

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