JPS54150092A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54150092A
JPS54150092A JP5922878A JP5922878A JPS54150092A JP S54150092 A JPS54150092 A JP S54150092A JP 5922878 A JP5922878 A JP 5922878A JP 5922878 A JP5922878 A JP 5922878A JP S54150092 A JPS54150092 A JP S54150092A
Authority
JP
Japan
Prior art keywords
region
type
well
channel
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5922878A
Other languages
Japanese (ja)
Other versions
JPS6222464B2 (en
Inventor
Toyoki Takemoto
Haruyasu Yamada
Michihiro Inoue
Hideaki Sadamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5922878A priority Critical patent/JPS54150092A/en
Publication of JPS54150092A publication Critical patent/JPS54150092A/en
Publication of JPS6222464B2 publication Critical patent/JPS6222464B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To enhance the noise characteristics at the low frequency region of the IC in which the J-FET and the bipolar semiconductor element are formed into a body by adding the inversion region of a low impurity density between the drain/source region and the high impurity density inversion region.
CONSTITUTION: N-type layer 32 is epitaxial-grown on the P-type Si substrate 1 via N+-type buried region 31a∼31c and then isolated to the island shape via P+- type region 33. Then P-type well 34a to be the back gate region, P-type well 34c to be the resistance, and P+-type base region 35 of the NPN transistor are formed respectively within isolated layers 32, and P+-type gate contact region 36 of the N-channel FET is provided within region 34a. After this, N+-type emitter region 37, N+-type source and drain regions 38 and 39, and N+-type contact part 40 and 41 are formed within region 35, well 34a and well 34c respectively. And P--type region 43 and 44 are added within channel 42a between region 38 and 39 and within channel 42c between region 40 and 41 respectively.
COPYRIGHT: (C)1979,JPO&Japio
JP5922878A 1978-05-17 1978-05-17 Semiconductor device Granted JPS54150092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5922878A JPS54150092A (en) 1978-05-17 1978-05-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5922878A JPS54150092A (en) 1978-05-17 1978-05-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54150092A true JPS54150092A (en) 1979-11-24
JPS6222464B2 JPS6222464B2 (en) 1987-05-18

Family

ID=13107301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5922878A Granted JPS54150092A (en) 1978-05-17 1978-05-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54150092A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0318413U (en) * 1989-03-02 1991-02-22

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5124874A (en) * 1974-08-23 1976-02-28 Nippon Telegraph & Telephone SETSUGOGATADENKAIKOKATORANJISUTA
JPS5230179A (en) * 1975-09-01 1977-03-07 Nec Corp Junction-type electric field effective transistor
JPS52100877A (en) * 1976-02-19 1977-08-24 Sony Corp Field effect transistor of junction type

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5124874A (en) * 1974-08-23 1976-02-28 Nippon Telegraph & Telephone SETSUGOGATADENKAIKOKATORANJISUTA
JPS5230179A (en) * 1975-09-01 1977-03-07 Nec Corp Junction-type electric field effective transistor
JPS52100877A (en) * 1976-02-19 1977-08-24 Sony Corp Field effect transistor of junction type

Also Published As

Publication number Publication date
JPS6222464B2 (en) 1987-05-18

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