JPS54150092A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54150092A JPS54150092A JP5922878A JP5922878A JPS54150092A JP S54150092 A JPS54150092 A JP S54150092A JP 5922878 A JP5922878 A JP 5922878A JP 5922878 A JP5922878 A JP 5922878A JP S54150092 A JPS54150092 A JP S54150092A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- well
- channel
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To enhance the noise characteristics at the low frequency region of the IC in which the J-FET and the bipolar semiconductor element are formed into a body by adding the inversion region of a low impurity density between the drain/source region and the high impurity density inversion region.
CONSTITUTION: N-type layer 32 is epitaxial-grown on the P-type Si substrate 1 via N+-type buried region 31a∼31c and then isolated to the island shape via P+- type region 33. Then P-type well 34a to be the back gate region, P-type well 34c to be the resistance, and P+-type base region 35 of the NPN transistor are formed respectively within isolated layers 32, and P+-type gate contact region 36 of the N-channel FET is provided within region 34a. After this, N+-type emitter region 37, N+-type source and drain regions 38 and 39, and N+-type contact part 40 and 41 are formed within region 35, well 34a and well 34c respectively. And P--type region 43 and 44 are added within channel 42a between region 38 and 39 and within channel 42c between region 40 and 41 respectively.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5922878A JPS54150092A (en) | 1978-05-17 | 1978-05-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5922878A JPS54150092A (en) | 1978-05-17 | 1978-05-17 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54150092A true JPS54150092A (en) | 1979-11-24 |
JPS6222464B2 JPS6222464B2 (en) | 1987-05-18 |
Family
ID=13107301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5922878A Granted JPS54150092A (en) | 1978-05-17 | 1978-05-17 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54150092A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0318413U (en) * | 1989-03-02 | 1991-02-22 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5124874A (en) * | 1974-08-23 | 1976-02-28 | Nippon Telegraph & Telephone | SETSUGOGATADENKAIKOKATORANJISUTA |
JPS5230179A (en) * | 1975-09-01 | 1977-03-07 | Nec Corp | Junction-type electric field effective transistor |
JPS52100877A (en) * | 1976-02-19 | 1977-08-24 | Sony Corp | Field effect transistor of junction type |
-
1978
- 1978-05-17 JP JP5922878A patent/JPS54150092A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5124874A (en) * | 1974-08-23 | 1976-02-28 | Nippon Telegraph & Telephone | SETSUGOGATADENKAIKOKATORANJISUTA |
JPS5230179A (en) * | 1975-09-01 | 1977-03-07 | Nec Corp | Junction-type electric field effective transistor |
JPS52100877A (en) * | 1976-02-19 | 1977-08-24 | Sony Corp | Field effect transistor of junction type |
Also Published As
Publication number | Publication date |
---|---|
JPS6222464B2 (en) | 1987-05-18 |
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