JPS5617058A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5617058A
JPS5617058A JP9256079A JP9256079A JPS5617058A JP S5617058 A JPS5617058 A JP S5617058A JP 9256079 A JP9256079 A JP 9256079A JP 9256079 A JP9256079 A JP 9256079A JP S5617058 A JPS5617058 A JP S5617058A
Authority
JP
Japan
Prior art keywords
circuit
type
layer
diffused
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9256079A
Other languages
Japanese (ja)
Inventor
Akihiko Furukawa
Koichi Kanzaki
Hajime Sasaki
Minoru Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9256079A priority Critical patent/JPS5617058A/en
Publication of JPS5617058A publication Critical patent/JPS5617058A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Abstract

PURPOSE:To reduce the leakage current of I<2>L circuit by forming the impurity density of the injector and the base of the I<2>L circuit when coexisting the I<2>L circuit and the bipolar transistor in the same semiconductor substrate. CONSTITUTION:Two N<+>-type buried layers 4 are diffused in a P-type Si substrate 1, an N-type layer 2 is epitaxially grown on the entire surface including the layer 4, an intruded P<+>-type region 3 is diffused in the substrate 1 to obtain the layer 2 isolated into island state including the layer 4, one is used as the I<2>L gate circuit IT and the other is used as an ordinary linear type longitudinal bipolar transistor circuit LT. Thereafter, a P-type injector region 11 and a base region 12 are diffused in the circuit IT. At that time the impurity density of the regions is selected lower than the density of the P-type base region 13 of the circuit LT formed later. In this manner, even if the diffusing depth is reduced, the leakage current of the I<2>L circuit is reduced. Thereafter, the other regions 14, 15, 15' are formed in these circuits.
JP9256079A 1979-07-23 1979-07-23 Semiconductor integrated circuit Pending JPS5617058A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9256079A JPS5617058A (en) 1979-07-23 1979-07-23 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9256079A JPS5617058A (en) 1979-07-23 1979-07-23 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5617058A true JPS5617058A (en) 1981-02-18

Family

ID=14057800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9256079A Pending JPS5617058A (en) 1979-07-23 1979-07-23 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5617058A (en)

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