JPS6439054A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS6439054A JPS6439054A JP62194875A JP19487587A JPS6439054A JP S6439054 A JPS6439054 A JP S6439054A JP 62194875 A JP62194875 A JP 62194875A JP 19487587 A JP19487587 A JP 19487587A JP S6439054 A JPS6439054 A JP S6439054A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- breakdown strength
- linear transistor
- type
- embedded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To integrate a linear transistor characterized by high breakdown strength, a linear transistor characterized by an excellent saturation voltage characteristic and low breakdown strength and a high speed IIL on the same substrate, by adopting a two-stage epitaxial structure. CONSTITUTION:A P-type first epitaxial layer 22 is formed on a substrate 21. An N-type second epitaxial layer 23 is formed on the first epitaxial layer 22. An N<+> type first embedded layer 24 is formed on the surface of the substrate 21 through the first 1 epitaxial layer 22 so that the boundary is brought into contact with the second epitaxial layer 23. N<+> type second embedded layers 26 are formed on the first epitaxial layer 22. A linear transistor 25 characterized by high breakdown strength is formed on the surface of the second epitaxial layer 23 at a region, where only the first embedded layer 24 is provided. A linear transistor characterized by low breakdown strength and an IIL 28 are formed on the surface of the second epitaxial layer 23 in the regions, where the second embedded layers 26 are provided. Thus the N-P-N linear transistor with high breakdown strength, the N-P-N linear transistor with low breakdown strength and the high speed IIL can be made to coexist.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62194875A JPS6439054A (en) | 1987-08-04 | 1987-08-04 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62194875A JPS6439054A (en) | 1987-08-04 | 1987-08-04 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6439054A true JPS6439054A (en) | 1989-02-09 |
Family
ID=16331764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62194875A Pending JPS6439054A (en) | 1987-08-04 | 1987-08-04 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6439054A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0461268A (en) * | 1990-06-28 | 1992-02-27 | Sanyo Electric Co Ltd | Integrated circuit device and manufacture thereof |
-
1987
- 1987-08-04 JP JP62194875A patent/JPS6439054A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0461268A (en) * | 1990-06-28 | 1992-02-27 | Sanyo Electric Co Ltd | Integrated circuit device and manufacture thereof |
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