JPS6431452A - Semiconductor integrated circuit containing current mirror - Google Patents

Semiconductor integrated circuit containing current mirror

Info

Publication number
JPS6431452A
JPS6431452A JP18816487A JP18816487A JPS6431452A JP S6431452 A JPS6431452 A JP S6431452A JP 18816487 A JP18816487 A JP 18816487A JP 18816487 A JP18816487 A JP 18816487A JP S6431452 A JPS6431452 A JP S6431452A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
region
current mirror
formed
type
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18816487A
Inventor
Hideyuki Kondo
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE:To reduce the area necessary for a current mirror circuit by composing an input side transistor and an output side transistor for determining the magnification power of a current mirror circuit commonly providing an emitter region of a a plurality of vertical transistors. CONSTITUTION:A circuit has a plurality of vertical transistors each having a base region 6 formed of a P-type semiconductor layer formed selectively in an emitter region made of an N-type epitaxial layer 3 on a P-type semiconductor substrate 1 made of silicon and a collector region 7 made of other N-type semiconductor layer formed selectively in the region 6, the emitter region is formed of an N-type buried layer 2, an N-type epitaxial layer 3, and an N<+> type semiconductor region 5, and the collector region is formed in a reverse transistor structure formed of the region 7. The vertical type reverse transistor is used as the input side transistor and the output side transistor of the current mirror circuit, and the emitter of the transistor is commonly provided. Accordingly, the exclusive area of the current mirror circuit can be reduced to decrease the size of a semiconductor integrated circuit containing the current mirror.
JP18816487A 1987-07-27 1987-07-27 Semiconductor integrated circuit containing current mirror Pending JPS6431452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18816487A JPS6431452A (en) 1987-07-27 1987-07-27 Semiconductor integrated circuit containing current mirror

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18816487A JPS6431452A (en) 1987-07-27 1987-07-27 Semiconductor integrated circuit containing current mirror

Publications (1)

Publication Number Publication Date
JPS6431452A true true JPS6431452A (en) 1989-02-01

Family

ID=16218871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18816487A Pending JPS6431452A (en) 1987-07-27 1987-07-27 Semiconductor integrated circuit containing current mirror

Country Status (1)

Country Link
JP (1) JPS6431452A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6611043B2 (en) 2000-03-15 2003-08-26 Nec Corporation Bipolar transistor and semiconductor device having the same
JP2006216802A (en) * 2005-02-04 2006-08-17 Hitachi Ltd Semiconductor device
US8018006B2 (en) 2005-02-04 2011-09-13 Hitachi Ulsi Systems Co., Ltd. Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6611043B2 (en) 2000-03-15 2003-08-26 Nec Corporation Bipolar transistor and semiconductor device having the same
JP2006216802A (en) * 2005-02-04 2006-08-17 Hitachi Ltd Semiconductor device
US8018006B2 (en) 2005-02-04 2011-09-13 Hitachi Ulsi Systems Co., Ltd. Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation

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