JPS5617055A - Semiconductor integrated circuit device and manufacture thereof - Google Patents
Semiconductor integrated circuit device and manufacture thereofInfo
- Publication number
- JPS5617055A JPS5617055A JP9358579A JP9358579A JPS5617055A JP S5617055 A JPS5617055 A JP S5617055A JP 9358579 A JP9358579 A JP 9358579A JP 9358579 A JP9358579 A JP 9358579A JP S5617055 A JPS5617055 A JP S5617055A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- npn
- pnp
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003321 amplification Effects 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a high withstand voltage NPN element and a high current amplification factor PNP element by forming the base region of the PNP element thinner than the collector region of the NPN element when forming an IC in combination with a longitudinal PNP transistor and an NPN transistor. CONSTITUTION:An N<+>-type buried region 2 is diffused in the surface of a P-type semiconductor substrate 1, an N-type layer is epitaxially grown on the entire surface thereof, the epitaxial layer is divided into islandlike regions 3, 3' via the P<+>-type region or insulators 4-4'', the region is used as the collector layer of the NPN element, and the region 3' is used as the base layer of the longitudinal PNP element. Then, the region 3' is selectively etched only in the surface to reduce the thickness thereof, and a P-type emitter region 5' is diffused therein of the longitudinal PNP element. The P-type base region 5 is diffused in the region 3 of the NPN element, and an N<+>-type emitter region 6 is formed therein. In this manner, a combination of high withstand voltage and high current amplification factor transistors can be easily performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9358579A JPS5617055A (en) | 1979-07-20 | 1979-07-20 | Semiconductor integrated circuit device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9358579A JPS5617055A (en) | 1979-07-20 | 1979-07-20 | Semiconductor integrated circuit device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5617055A true JPS5617055A (en) | 1981-02-18 |
Family
ID=14086351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9358579A Pending JPS5617055A (en) | 1979-07-20 | 1979-07-20 | Semiconductor integrated circuit device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5617055A (en) |
-
1979
- 1979-07-20 JP JP9358579A patent/JPS5617055A/en active Pending
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