JPS57188862A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57188862A
JPS57188862A JP7349781A JP7349781A JPS57188862A JP S57188862 A JPS57188862 A JP S57188862A JP 7349781 A JP7349781 A JP 7349781A JP 7349781 A JP7349781 A JP 7349781A JP S57188862 A JPS57188862 A JP S57188862A
Authority
JP
Japan
Prior art keywords
epitaxial layer
low
logic circuit
speed
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7349781A
Other languages
Japanese (ja)
Inventor
Yoshinori Akamatsu
Tatsutoshi Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP7349781A priority Critical patent/JPS57188862A/en
Publication of JPS57188862A publication Critical patent/JPS57188862A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To integrate a bipolar logic circuit and an FET into one chip by a device wherein both the high-voltage-resistance, high-speed bipolar logic circuit and the low-speed, low-power FET which is irrespective of a depth of an epitaxial layer are formed together in the common epitaxial layer separated into respective element regions with the isoplanar structure. CONSTITUTION:A low-density N<-> type epitaxial layer 2 is developed on a P type substrate 1 in a small depth of 2mum and then it is separated into respective element regions using the isoplanar technology. A bipolar Tr section comprises a high-density N<+> type collector electrode taking-out part 8 which is adjacent a buried layer 4, a P type base region 9 which is formed in the epitaxial layer 2 through diffusion, and an N<+> type emitter region 10. Since the epitaxial layer 2 has low density and is thin, the section serves as a high-voltage-resistance, high-speed logic circuit. A CMOS section includes sorce and drain regions 14, 15 in the epitaxial layer 2 and a gate electrode 17 above a gate oxide film 16, thus forming a P-MOSFET. This serves as a logic circuit of low-speed and low-consumption.
JP7349781A 1981-05-18 1981-05-18 Semiconductor integrated circuit device Pending JPS57188862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7349781A JPS57188862A (en) 1981-05-18 1981-05-18 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7349781A JPS57188862A (en) 1981-05-18 1981-05-18 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57188862A true JPS57188862A (en) 1982-11-19

Family

ID=13519945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7349781A Pending JPS57188862A (en) 1981-05-18 1981-05-18 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57188862A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987850A (en) * 1982-11-11 1984-05-21 Matsushita Electronics Corp Semiconductor device
JPS5994861A (en) * 1982-11-24 1984-05-31 Hitachi Ltd Semiconductor integrated circuit device
JPS60137056A (en) * 1983-12-26 1985-07-20 Hitachi Ltd Semiconductor device
JPS60211867A (en) * 1984-04-05 1985-10-24 Nec Corp Semiconductor device and manufacture thereof
JPS60226163A (en) * 1984-04-17 1985-11-11 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン Method of producing cmos structure having schottky bipolar transistor
EP0178649A2 (en) * 1984-10-17 1986-04-23 Hitachi, Ltd. Complementary semiconductor device
JPS61127147A (en) * 1984-11-26 1986-06-14 Hitachi Ltd Semiconductor device
EP0232497A2 (en) * 1985-12-17 1987-08-19 Siemens Aktiengesellschaft Process for simultaneous manufacturing of bipolar and complementary MOS-transistors on a common silicon substrate
JPS63281455A (en) * 1987-05-13 1988-11-17 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPH025464A (en) * 1988-06-24 1990-01-10 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
US5121185A (en) * 1987-10-09 1992-06-09 Hitachi, Ltd. Monolithic semiconductor IC device including blocks having different functions with different breakdown voltages
JP2000294565A (en) * 1999-04-08 2000-10-20 Seiko Instruments Inc Manufacture of bipolar transistor and semiconductor integrated circuit device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987850A (en) * 1982-11-11 1984-05-21 Matsushita Electronics Corp Semiconductor device
JPH058583B2 (en) * 1982-11-24 1993-02-02 Hitachi Ltd
JPS5994861A (en) * 1982-11-24 1984-05-31 Hitachi Ltd Semiconductor integrated circuit device
US5508549A (en) * 1982-11-24 1996-04-16 Hitachi, Ltd. Semiconductor integrated circuit device and a method for manufacturing the same
JPS60137056A (en) * 1983-12-26 1985-07-20 Hitachi Ltd Semiconductor device
JPS60211867A (en) * 1984-04-05 1985-10-24 Nec Corp Semiconductor device and manufacture thereof
JPS60226163A (en) * 1984-04-17 1985-11-11 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン Method of producing cmos structure having schottky bipolar transistor
EP0178649A2 (en) * 1984-10-17 1986-04-23 Hitachi, Ltd. Complementary semiconductor device
JPS61127147A (en) * 1984-11-26 1986-06-14 Hitachi Ltd Semiconductor device
EP0232497A2 (en) * 1985-12-17 1987-08-19 Siemens Aktiengesellschaft Process for simultaneous manufacturing of bipolar and complementary MOS-transistors on a common silicon substrate
JPS63281455A (en) * 1987-05-13 1988-11-17 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
US5121185A (en) * 1987-10-09 1992-06-09 Hitachi, Ltd. Monolithic semiconductor IC device including blocks having different functions with different breakdown voltages
JPH025464A (en) * 1988-06-24 1990-01-10 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JP2000294565A (en) * 1999-04-08 2000-10-20 Seiko Instruments Inc Manufacture of bipolar transistor and semiconductor integrated circuit device
JP4681090B2 (en) * 1999-04-08 2011-05-11 セイコーインスツル株式会社 Manufacturing method of semiconductor device

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