JPH025464A - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPH025464A
JPH025464A JP15472988A JP15472988A JPH025464A JP H025464 A JPH025464 A JP H025464A JP 15472988 A JP15472988 A JP 15472988A JP 15472988 A JP15472988 A JP 15472988A JP H025464 A JPH025464 A JP H025464A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
region
formed
elements
misfet
isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15472988A
Inventor
Keiichi Higeta
Masanori Odaka
Katsumi Ogiue
Nobuo Tanba
Akihisa Uchida
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To easily isolate elements by allowing a first region for forming the base region and the emitter region of a bipolar transistor, a second region for forming a collector leading region, and a third region for forming a MISFET to protrude on a substrate.
CONSTITUTION: First masks are formed on a first region formed with a base region and an emitter region of a substrate, a second region formed with a leading region of a collector region, and a third region formed with a MISFET, the peripheries of the first, second and third regions are etched to allow the first, second and third regions to protrude, a second mask is formed on the side face of the protruding first region, the parts exposed from the first and second masks of the substrate are oxidized to form an element isolating insulating film. Thus, the isolation of elements between the bipolar transistors, the isolation of elements between the transistor and the MISFET and the isolation of elements between the MISFETs are simultaneously conducted in the same step.
COPYRIGHT: (C)1990,JPO&Japio
JP15472988A 1988-06-24 1988-06-24 Semiconductor integrated circuit device and manufacture thereof Pending JPH025464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15472988A JPH025464A (en) 1988-06-24 1988-06-24 Semiconductor integrated circuit device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15472988A JPH025464A (en) 1988-06-24 1988-06-24 Semiconductor integrated circuit device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH025464A true true JPH025464A (en) 1990-01-10

Family

ID=15590671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15472988A Pending JPH025464A (en) 1988-06-24 1988-06-24 Semiconductor integrated circuit device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH025464A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188862A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Semiconductor integrated circuit device
JPS58110074A (en) * 1981-12-23 1983-06-30 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS61244059A (en) * 1985-04-22 1986-10-30 Hitachi Ltd Manufacture of semiconductor device
JPS62155553A (en) * 1985-12-17 1987-07-10 Siemens Ag Simultaneous manufacture of bipolar transistor and cmos transistor
JPS62189752A (en) * 1986-02-17 1987-08-19 Hitachi Device Eng Co Ltd Semiconductor device
JPS63199463A (en) * 1987-01-30 1988-08-17 Texas Instruments Inc Manufacture of bipolar transistor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188862A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Semiconductor integrated circuit device
JPS58110074A (en) * 1981-12-23 1983-06-30 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS61244059A (en) * 1985-04-22 1986-10-30 Hitachi Ltd Manufacture of semiconductor device
JPS62155553A (en) * 1985-12-17 1987-07-10 Siemens Ag Simultaneous manufacture of bipolar transistor and cmos transistor
JPS62189752A (en) * 1986-02-17 1987-08-19 Hitachi Device Eng Co Ltd Semiconductor device
JPS63199463A (en) * 1987-01-30 1988-08-17 Texas Instruments Inc Manufacture of bipolar transistor

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