JPS57155771A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS57155771A JPS57155771A JP56040332A JP4033281A JPS57155771A JP S57155771 A JPS57155771 A JP S57155771A JP 56040332 A JP56040332 A JP 56040332A JP 4033281 A JP4033281 A JP 4033281A JP S57155771 A JPS57155771 A JP S57155771A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- diffusion
- regions
- circuit
- writing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To obtain an EPROM with high surface breakdown voltage and junction pressure-resistance and high operating speed by a method wherein the junction depth of a writing-in circuit part is increased, and the change of impurity density thereat is reduced with shallow junction of a reading-out circuit. CONSTITUTION:A memory cell part 3, writing circuit 4 and reading circuit 5 constituting the EPROM are respectively isolated by a field SiO2 film 2 and P<+> type channel stopper 16 on the lower part thereof. The memory cell part 3 is constituted using a known MOSFET. Hereupon, an N type diffused regions 21, 22 serving as the source, drain regions of the reading circuit part 5 are shallowly formed, for example, surface density -10<20>/cm<3> and diffusion depth -0.3mum; while each of diffusion regions 17, 18 of the reading circuit part is constituted for example, of arsenic diffusion layer with surface density -10<20>/cm<3> and diffusion depth -0.3mum and phosphorous diffused layer with surface density -10<19>/cm<3> and diffusion depth 1mum. In other words, the diffused regions 17, 18 are formed in deep slanting junction with a substrate 1 on the writing side.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56040332A JPS57155771A (en) | 1981-03-23 | 1981-03-23 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56040332A JPS57155771A (en) | 1981-03-23 | 1981-03-23 | Semiconductor integrated circuit device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62266329A Division JPS63126279A (en) | 1987-10-23 | 1987-10-23 | Manufacture of semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57155771A true JPS57155771A (en) | 1982-09-25 |
Family
ID=12577662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56040332A Pending JPS57155771A (en) | 1981-03-23 | 1981-03-23 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57155771A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59194473A (en) * | 1983-04-19 | 1984-11-05 | Sanyo Electric Co Ltd | Manufacture of mos semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5168776A (en) * | 1974-12-06 | 1976-06-14 | Ibm | Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta |
JPS5591877A (en) * | 1978-12-30 | 1980-07-11 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1981
- 1981-03-23 JP JP56040332A patent/JPS57155771A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5168776A (en) * | 1974-12-06 | 1976-06-14 | Ibm | Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta |
JPS5591877A (en) * | 1978-12-30 | 1980-07-11 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59194473A (en) * | 1983-04-19 | 1984-11-05 | Sanyo Electric Co Ltd | Manufacture of mos semiconductor device |
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