JPS5567160A - Semiconductor memory storage - Google Patents
Semiconductor memory storageInfo
- Publication number
- JPS5567160A JPS5567160A JP14010378A JP14010378A JPS5567160A JP S5567160 A JPS5567160 A JP S5567160A JP 14010378 A JP14010378 A JP 14010378A JP 14010378 A JP14010378 A JP 14010378A JP S5567160 A JPS5567160 A JP S5567160A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- depth
- thickness
- depletion layer
- dmax
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005055 memory storage Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 6
- 239000012535 impurity Substances 0.000 abstract 2
- 230000003190 augmentative effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE: To desirably operate this device, by forming the thickness of a semiconductor in value larger than the maximum thickness of a depletion layer in the case when the potential of a channel portion is equal to a source region, in a transistor type memory storage made up to an insular semicnductor layer on an insulating substrate.
CONSTITUTION: The threshold value voltage Vth of a FET changes in proportional to the change Qdep of a layer under a gate electrode when a n channel, and the change is proportioned to the depth xdmax of a depletion layer. The depth xdmax alters owing to the concentration of the impurities of a substrate, the potential of the substrate and gate voltage. The depth of the depletion layer spreads by the gate voltage, becomes maximum in thickness t and thereafter does not increase, the change Qdep is also saturated and the threshold value Vth does not vary. When the substrate is biased to negative to a source by the back gate effect of the FET, the depth of the depletion layer is augmented, and the threshold value voltage increases. When the thickness t is made larger than the depth xdmax of the depletion layer in the case when the substrate is biased to zero by selecting the thickness t of a channel portion and the concentration of the impurities of the substrate, memory elements can accurately be worked.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53140103A JPS6040710B2 (en) | 1978-11-14 | 1978-11-14 | semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53140103A JPS6040710B2 (en) | 1978-11-14 | 1978-11-14 | semiconductor storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5567160A true JPS5567160A (en) | 1980-05-21 |
| JPS6040710B2 JPS6040710B2 (en) | 1985-09-12 |
Family
ID=15261003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53140103A Expired JPS6040710B2 (en) | 1978-11-14 | 1978-11-14 | semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6040710B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS627149A (en) * | 1985-07-03 | 1987-01-14 | Agency Of Ind Science & Technol | Semiconductor memory device |
| US4864377A (en) * | 1987-05-26 | 1989-09-05 | U.S. Philips Corp. | Silicon on insulator (SOI) semiconductor device |
| JPH02179031A (en) * | 1988-12-28 | 1990-07-12 | Mitsubishi Electric Corp | Semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6449508U (en) * | 1987-09-22 | 1989-03-28 |
-
1978
- 1978-11-14 JP JP53140103A patent/JPS6040710B2/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS627149A (en) * | 1985-07-03 | 1987-01-14 | Agency Of Ind Science & Technol | Semiconductor memory device |
| JPH0586864B2 (en) * | 1985-07-03 | 1993-12-14 | Kogyo Gijutsuin | |
| US4864377A (en) * | 1987-05-26 | 1989-09-05 | U.S. Philips Corp. | Silicon on insulator (SOI) semiconductor device |
| JPH02179031A (en) * | 1988-12-28 | 1990-07-12 | Mitsubishi Electric Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6040710B2 (en) | 1985-09-12 |
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