JPS5565472A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS5565472A
JPS5565472A JP13967578A JP13967578A JPS5565472A JP S5565472 A JPS5565472 A JP S5565472A JP 13967578 A JP13967578 A JP 13967578A JP 13967578 A JP13967578 A JP 13967578A JP S5565472 A JPS5565472 A JP S5565472A
Authority
JP
Japan
Prior art keywords
layer
thickness
max
equipotential
obtainable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13967578A
Other languages
Japanese (ja)
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13967578A priority Critical patent/JPS5565472A/en
Publication of JPS5565472A publication Critical patent/JPS5565472A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To stabilize an operation of IC using a floating substrate by adjusting so as to have the maximum thickness xdmax of a depletion layer when a semiconductor layer in thickness t is equipotential to a source larger than t.
CONSTITUTION: An Si n-epitaxial layer is provided on an insulating substrate 1, a p-layer 2 is obtained through patterning, and a gate terminal 4 is provided by way of an insulating film 3. According to this constitution, a change in threshold voltage Vth is retained up until an electron injected in the layer 2 is extinguished; then from operating FET, a different operation is taken and a response changes in the previous pulse condition. A stable operation is not obtainable consequently. Now, a film thickness t of the layer 2 is selected smaller than the maximum value xdmax of a depletion layer when the layer 2 is equipotential to a source 5. From adding then voltage + Vg to the gate, xdmax is further turned incremental, however, an occurrence of the depletion layer is confined within the thickness t of the layer 2, which becomes constant at maximum value t and makes no change any more thereafter. Thus, MOSFET unchanging in threshold voltage and stable in characteristic is obtainable through adjusting impurity density and thickness t of the layer 2.
COPYRIGHT: (C)1980,JPO&Japio
JP13967578A 1978-11-13 1978-11-13 Integrated circuit device Pending JPS5565472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13967578A JPS5565472A (en) 1978-11-13 1978-11-13 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13967578A JPS5565472A (en) 1978-11-13 1978-11-13 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5565472A true JPS5565472A (en) 1980-05-16

Family

ID=15250793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13967578A Pending JPS5565472A (en) 1978-11-13 1978-11-13 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5565472A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63215077A (en) * 1987-03-04 1988-09-07 Agency Of Ind Science & Technol Mos transistor
US5111260A (en) * 1983-06-17 1992-05-05 Texax Instruments Incorporated Polysilicon FETs

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160173A (en) * 1974-09-12 1976-05-25 Rca Corp Zetsuengeetodenkaikokatoranjisuta
JPS52141580A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Manufacture of mos-type semiconductor device
JPS52144980A (en) * 1976-05-28 1977-12-02 Agency Of Ind Science & Technol Sos semiconductor device
JPS5377481A (en) * 1976-12-21 1978-07-08 Nec Corp Prodiction of semionductor substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160173A (en) * 1974-09-12 1976-05-25 Rca Corp Zetsuengeetodenkaikokatoranjisuta
JPS52141580A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Manufacture of mos-type semiconductor device
JPS52144980A (en) * 1976-05-28 1977-12-02 Agency Of Ind Science & Technol Sos semiconductor device
JPS5377481A (en) * 1976-12-21 1978-07-08 Nec Corp Prodiction of semionductor substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5111260A (en) * 1983-06-17 1992-05-05 Texax Instruments Incorporated Polysilicon FETs
JPS63215077A (en) * 1987-03-04 1988-09-07 Agency Of Ind Science & Technol Mos transistor

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