JPS5565472A - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- JPS5565472A JPS5565472A JP13967578A JP13967578A JPS5565472A JP S5565472 A JPS5565472 A JP S5565472A JP 13967578 A JP13967578 A JP 13967578A JP 13967578 A JP13967578 A JP 13967578A JP S5565472 A JPS5565472 A JP S5565472A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- max
- equipotential
- obtainable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To stabilize an operation of IC using a floating substrate by adjusting so as to have the maximum thickness xdmax of a depletion layer when a semiconductor layer in thickness t is equipotential to a source larger than t.
CONSTITUTION: An Si n-epitaxial layer is provided on an insulating substrate 1, a p-layer 2 is obtained through patterning, and a gate terminal 4 is provided by way of an insulating film 3. According to this constitution, a change in threshold voltage Vth is retained up until an electron injected in the layer 2 is extinguished; then from operating FET, a different operation is taken and a response changes in the previous pulse condition. A stable operation is not obtainable consequently. Now, a film thickness t of the layer 2 is selected smaller than the maximum value xdmax of a depletion layer when the layer 2 is equipotential to a source 5. From adding then voltage + Vg to the gate, xdmax is further turned incremental, however, an occurrence of the depletion layer is confined within the thickness t of the layer 2, which becomes constant at maximum value t and makes no change any more thereafter. Thus, MOSFET unchanging in threshold voltage and stable in characteristic is obtainable through adjusting impurity density and thickness t of the layer 2.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13967578A JPS5565472A (en) | 1978-11-13 | 1978-11-13 | Integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13967578A JPS5565472A (en) | 1978-11-13 | 1978-11-13 | Integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5565472A true JPS5565472A (en) | 1980-05-16 |
Family
ID=15250793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13967578A Pending JPS5565472A (en) | 1978-11-13 | 1978-11-13 | Integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5565472A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63215077A (en) * | 1987-03-04 | 1988-09-07 | Agency Of Ind Science & Technol | Mos transistor |
US5111260A (en) * | 1983-06-17 | 1992-05-05 | Texax Instruments Incorporated | Polysilicon FETs |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5160173A (en) * | 1974-09-12 | 1976-05-25 | Rca Corp | Zetsuengeetodenkaikokatoranjisuta |
JPS52141580A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of mos-type semiconductor device |
JPS52144980A (en) * | 1976-05-28 | 1977-12-02 | Agency Of Ind Science & Technol | Sos semiconductor device |
JPS5377481A (en) * | 1976-12-21 | 1978-07-08 | Nec Corp | Prodiction of semionductor substrate |
-
1978
- 1978-11-13 JP JP13967578A patent/JPS5565472A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5160173A (en) * | 1974-09-12 | 1976-05-25 | Rca Corp | Zetsuengeetodenkaikokatoranjisuta |
JPS52141580A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of mos-type semiconductor device |
JPS52144980A (en) * | 1976-05-28 | 1977-12-02 | Agency Of Ind Science & Technol | Sos semiconductor device |
JPS5377481A (en) * | 1976-12-21 | 1978-07-08 | Nec Corp | Prodiction of semionductor substrate |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5111260A (en) * | 1983-06-17 | 1992-05-05 | Texax Instruments Incorporated | Polysilicon FETs |
JPS63215077A (en) * | 1987-03-04 | 1988-09-07 | Agency Of Ind Science & Technol | Mos transistor |
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