JPS55103772A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55103772A JPS55103772A JP1129079A JP1129079A JPS55103772A JP S55103772 A JPS55103772 A JP S55103772A JP 1129079 A JP1129079 A JP 1129079A JP 1129079 A JP1129079 A JP 1129079A JP S55103772 A JPS55103772 A JP S55103772A
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrode
- semiconductor device
- gate
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a low impedance semiconductor device by providing, between a control electrode and a main current path provided adjacent to each other, a resistor which essentially produces a feedback action with respect to the current flowing in the control electrode.
CONSTITUTION: On n+ region 11, which is a substrate and which is to become a drain region are formed n- region 12, which is an epitaxial layer and which constitutes a channel, n+ region 13, which is a source region, and p+ region 14, which is a gate region. Further, drain electrode 11', source electrode 13' and gate electrode 14', made of a metal such as Al, Mo, W, Au, or a low resistance poly-silicon are formed. Also, insulating layer 16 is provided.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1129079A JPS55103772A (en) | 1979-02-02 | 1979-02-02 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1129079A JPS55103772A (en) | 1979-02-02 | 1979-02-02 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55103772A true JPS55103772A (en) | 1980-08-08 |
Family
ID=11773857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1129079A Pending JPS55103772A (en) | 1979-02-02 | 1979-02-02 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55103772A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58212181A (en) * | 1982-06-02 | 1983-12-09 | Matsushita Electric Ind Co Ltd | Static induction type semiconductor device |
JPS5990963A (en) * | 1982-11-17 | 1984-05-25 | Matsushita Electric Ind Co Ltd | Electrostatic induction type semiconductor device |
JPH02181972A (en) * | 1989-01-09 | 1990-07-16 | Komatsu Ltd | Semiconductor device and manufacture thereof |
-
1979
- 1979-02-02 JP JP1129079A patent/JPS55103772A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58212181A (en) * | 1982-06-02 | 1983-12-09 | Matsushita Electric Ind Co Ltd | Static induction type semiconductor device |
JPS5990963A (en) * | 1982-11-17 | 1984-05-25 | Matsushita Electric Ind Co Ltd | Electrostatic induction type semiconductor device |
JPH02181972A (en) * | 1989-01-09 | 1990-07-16 | Komatsu Ltd | Semiconductor device and manufacture thereof |
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