JPS55103772A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55103772A
JPS55103772A JP1129079A JP1129079A JPS55103772A JP S55103772 A JPS55103772 A JP S55103772A JP 1129079 A JP1129079 A JP 1129079A JP 1129079 A JP1129079 A JP 1129079A JP S55103772 A JPS55103772 A JP S55103772A
Authority
JP
Japan
Prior art keywords
region
electrode
semiconductor device
gate
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1129079A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP1129079A priority Critical patent/JPS55103772A/en
Publication of JPS55103772A publication Critical patent/JPS55103772A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a low impedance semiconductor device by providing, between a control electrode and a main current path provided adjacent to each other, a resistor which essentially produces a feedback action with respect to the current flowing in the control electrode.
CONSTITUTION: On n+ region 11, which is a substrate and which is to become a drain region are formed n- region 12, which is an epitaxial layer and which constitutes a channel, n+ region 13, which is a source region, and p+ region 14, which is a gate region. Further, drain electrode 11', source electrode 13' and gate electrode 14', made of a metal such as Al, Mo, W, Au, or a low resistance poly-silicon are formed. Also, insulating layer 16 is provided.
COPYRIGHT: (C)1980,JPO&Japio
JP1129079A 1979-02-02 1979-02-02 Semiconductor device Pending JPS55103772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1129079A JPS55103772A (en) 1979-02-02 1979-02-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1129079A JPS55103772A (en) 1979-02-02 1979-02-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55103772A true JPS55103772A (en) 1980-08-08

Family

ID=11773857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1129079A Pending JPS55103772A (en) 1979-02-02 1979-02-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55103772A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212181A (en) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd Static induction type semiconductor device
JPS5990963A (en) * 1982-11-17 1984-05-25 Matsushita Electric Ind Co Ltd Electrostatic induction type semiconductor device
JPH02181972A (en) * 1989-01-09 1990-07-16 Komatsu Ltd Semiconductor device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212181A (en) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd Static induction type semiconductor device
JPS5990963A (en) * 1982-11-17 1984-05-25 Matsushita Electric Ind Co Ltd Electrostatic induction type semiconductor device
JPH02181972A (en) * 1989-01-09 1990-07-16 Komatsu Ltd Semiconductor device and manufacture thereof

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