JPS5710973A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5710973A
JPS5710973A JP8570680A JP8570680A JPS5710973A JP S5710973 A JPS5710973 A JP S5710973A JP 8570680 A JP8570680 A JP 8570680A JP 8570680 A JP8570680 A JP 8570680A JP S5710973 A JPS5710973 A JP S5710973A
Authority
JP
Japan
Prior art keywords
width
substrate
specified
length
current path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8570680A
Other languages
Japanese (ja)
Other versions
JPH054822B2 (en
Inventor
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP8570680A priority Critical patent/JPS5710973A/en
Publication of JPS5710973A publication Critical patent/JPS5710973A/en
Publication of JPH054822B2 publication Critical patent/JPH054822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To easily obtain the improvement of integrated density, an increase in power density, and superior characteristics design by directing the width direction of a main current path to the thickness direction of a substrate. CONSTITUTION:The length L and thickness d of the main current path of a semiconductor device such as an insulating gate field effect transistor having a main current path specified by the length L, thickness d, and width W nearly crossed at right angles each other are specified to the main surface of the substrate 1 in almost parallel direction and the width W is specified to the main surface of the substrate 1 in approximately right-angular direction respectively. The width W is made longer than the length L.
JP8570680A 1980-06-24 1980-06-24 Semiconductor device Granted JPS5710973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8570680A JPS5710973A (en) 1980-06-24 1980-06-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8570680A JPS5710973A (en) 1980-06-24 1980-06-24 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62003822A Division JPS62169362A (en) 1987-01-09 1987-01-09 Capacitor device

Publications (2)

Publication Number Publication Date
JPS5710973A true JPS5710973A (en) 1982-01-20
JPH054822B2 JPH054822B2 (en) 1993-01-20

Family

ID=13866261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8570680A Granted JPS5710973A (en) 1980-06-24 1980-06-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710973A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5392543A (en) * 1977-01-25 1978-08-14 Yazaki Corp Method of controlling solar heat utilizing cooling and heating water feeding system
JPS59117258A (en) * 1982-12-24 1984-07-06 Hitachi Ltd Semiconductor device and manufacture thereof
JPS60105268A (en) * 1983-11-11 1985-06-10 Toshiba Corp Semiconductor device and manufacture thereof
US4751557A (en) * 1982-03-10 1988-06-14 Hitachi, Ltd. Dram with FET stacked over capacitor
JPS6442176A (en) * 1987-08-10 1989-02-14 Toshiba Corp Semiconductor device and manufacture thereof
JPS6482672A (en) * 1987-09-25 1989-03-28 Toshiba Corp Mos transistor
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4860071A (en) * 1985-03-08 1989-08-22 Hitachi, Ltd. Semiconductor memory using trench capacitor
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
JPH02263473A (en) * 1988-11-21 1990-10-26 Hitachi Ltd Semiconductor device and semiconductor storage device
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US5170234A (en) * 1984-07-03 1992-12-08 Texas Instruments Incorporated High density dynamic RAM with trench capacitor
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
JP2008034427A (en) * 2006-07-26 2008-02-14 Elpida Memory Inc Semiconductor device and manufacturing method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6625934B2 (en) 2015-07-14 2019-12-25 信越化学工業株式会社 Resist underlayer film material, pattern forming method, and compound

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506287A (en) * 1973-05-18 1975-01-22
JPS51147269A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Field effect transistor
JPS5499575A (en) * 1978-01-24 1979-08-06 Pioneer Electronic Corp Field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506287A (en) * 1973-05-18 1975-01-22
JPS51147269A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Field effect transistor
JPS5499575A (en) * 1978-01-24 1979-08-06 Pioneer Electronic Corp Field effect transistor

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5392543A (en) * 1977-01-25 1978-08-14 Yazaki Corp Method of controlling solar heat utilizing cooling and heating water feeding system
JPS5810657B2 (en) * 1977-01-25 1983-02-26 矢崎総業株式会社 Solar heating/cooling/water heating equipment
US4751557A (en) * 1982-03-10 1988-06-14 Hitachi, Ltd. Dram with FET stacked over capacitor
JPS59117258A (en) * 1982-12-24 1984-07-06 Hitachi Ltd Semiconductor device and manufacture thereof
JPH0566027B2 (en) * 1982-12-24 1993-09-20 Hitachi Ltd
JPS60105268A (en) * 1983-11-11 1985-06-10 Toshiba Corp Semiconductor device and manufacture thereof
US5170234A (en) * 1984-07-03 1992-12-08 Texas Instruments Incorporated High density dynamic RAM with trench capacitor
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4860071A (en) * 1985-03-08 1989-08-22 Hitachi, Ltd. Semiconductor memory using trench capacitor
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
JPS6442176A (en) * 1987-08-10 1989-02-14 Toshiba Corp Semiconductor device and manufacture thereof
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
JPS6482672A (en) * 1987-09-25 1989-03-28 Toshiba Corp Mos transistor
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
JPH02263473A (en) * 1988-11-21 1990-10-26 Hitachi Ltd Semiconductor device and semiconductor storage device
JP2008034427A (en) * 2006-07-26 2008-02-14 Elpida Memory Inc Semiconductor device and manufacturing method thereof
US7867856B2 (en) 2006-07-26 2011-01-11 Elpida Memory, Inc. Method of manufacturing a semiconductor device having fin-field effect transistor

Also Published As

Publication number Publication date
JPH054822B2 (en) 1993-01-20

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