JPH054822B2 - - Google Patents

Info

Publication number
JPH054822B2
JPH054822B2 JP55085706A JP8570680A JPH054822B2 JP H054822 B2 JPH054822 B2 JP H054822B2 JP 55085706 A JP55085706 A JP 55085706A JP 8570680 A JP8570680 A JP 8570680A JP H054822 B2 JPH054822 B2 JP H054822B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55085706A
Other versions
JPS5710973A (en
Inventor
Yutaka Hayashi
Original Assignee
Kogyo Gijutsuin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kogyo Gijutsuin filed Critical Kogyo Gijutsuin
Priority to JP55085706A priority Critical patent/JPH054822B2/ja
Publication of JPS5710973A publication Critical patent/JPS5710973A/en
Publication of JPH054822B2 publication Critical patent/JPH054822B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
JP55085706A 1980-06-24 1980-06-24 Expired - Lifetime JPH054822B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55085706A JPH054822B2 (en) 1980-06-24 1980-06-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55085706A JPH054822B2 (en) 1980-06-24 1980-06-24

Publications (2)

Publication Number Publication Date
JPS5710973A JPS5710973A (en) 1982-01-20
JPH054822B2 true JPH054822B2 (en) 1993-01-20

Family

ID=13866261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55085706A Expired - Lifetime JPH054822B2 (en) 1980-06-24 1980-06-24

Country Status (1)

Country Link
JP (1) JPH054822B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10156788B2 (en) 2015-07-14 2018-12-18 Shin-Etsu Chemical Co., Ltd. Resist underlayer film composition, patterning process, and compound

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810657B2 (en) * 1977-01-25 1983-02-26 Yazaki Sogyo Kk
JPH0376584B2 (en) * 1982-03-10 1991-12-05 Hitachi Ltd
JPH0566027B2 (en) * 1982-12-24 1993-09-20 Hitachi Ltd
JPS60105268A (en) * 1983-11-11 1985-06-10 Toshiba Corp Semiconductor device and manufacture thereof
US5170234A (en) * 1984-07-03 1992-12-08 Texas Instruments Incorporated High density dynamic RAM with trench capacitor
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
KR930007522B1 (en) * 1985-03-08 1993-08-12 미다 가쓰시게 Semiconductor memory using a trench capacitor
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
JP2582794B2 (en) * 1987-08-10 1997-02-19 株式会社東芝 Semiconductor device and manufacturing method thereof
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
JP2579954B2 (en) * 1987-09-25 1997-02-12 株式会社東芝 Mos transistor
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
JP2768719B2 (en) * 1988-11-21 1998-06-25 株式会社日立製作所 A semiconductor device and a semiconductor memory device
JP4552908B2 (en) * 2006-07-26 2010-09-29 エルピーダメモリ株式会社 Manufacturing method of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506287A (en) * 1973-05-18 1975-01-22
JPS51147269A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Field effect transistor
JPS5499575A (en) * 1978-01-24 1979-08-06 Pioneer Electronic Corp Field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506287A (en) * 1973-05-18 1975-01-22
JPS51147269A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Field effect transistor
JPS5499575A (en) * 1978-01-24 1979-08-06 Pioneer Electronic Corp Field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10156788B2 (en) 2015-07-14 2018-12-18 Shin-Etsu Chemical Co., Ltd. Resist underlayer film composition, patterning process, and compound

Also Published As

Publication number Publication date
JPS5710973A (en) 1982-01-20

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