JPS5365081A - Field effect semiconductor device - Google Patents

Field effect semiconductor device

Info

Publication number
JPS5365081A
JPS5365081A JP14085276A JP14085276A JPS5365081A JP S5365081 A JPS5365081 A JP S5365081A JP 14085276 A JP14085276 A JP 14085276A JP 14085276 A JP14085276 A JP 14085276A JP S5365081 A JPS5365081 A JP S5365081A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
effect semiconductor
fet
protectign
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14085276A
Other languages
Japanese (ja)
Other versions
JPS614198B2 (en
Inventor
Kazunari Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14085276A priority Critical patent/JPS5365081A/en
Publication of JPS5365081A publication Critical patent/JPS5365081A/en
Publication of JPS614198B2 publication Critical patent/JPS614198B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Abstract

PURPOSE:To stabilize the operation of an FET by providing an additional second conductivity type region in the postion away from a protectign device in the FET having a semiconductor device and a protecting device of gate control type junction structure.
JP14085276A 1976-11-22 1976-11-22 Field effect semiconductor device Granted JPS5365081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14085276A JPS5365081A (en) 1976-11-22 1976-11-22 Field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14085276A JPS5365081A (en) 1976-11-22 1976-11-22 Field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5365081A true JPS5365081A (en) 1978-06-10
JPS614198B2 JPS614198B2 (en) 1986-02-07

Family

ID=15278225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14085276A Granted JPS5365081A (en) 1976-11-22 1976-11-22 Field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5365081A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650527A (en) * 1979-09-29 1981-05-07 Fujitsu Ltd Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650527A (en) * 1979-09-29 1981-05-07 Fujitsu Ltd Semiconductor integrated circuit device
JPS6359258B2 (en) * 1979-09-29 1988-11-18

Also Published As

Publication number Publication date
JPS614198B2 (en) 1986-02-07

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