JPS5378176A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5378176A
JPS5378176A JP15335376A JP15335376A JPS5378176A JP S5378176 A JPS5378176 A JP S5378176A JP 15335376 A JP15335376 A JP 15335376A JP 15335376 A JP15335376 A JP 15335376A JP S5378176 A JPS5378176 A JP S5378176A
Authority
JP
Japan
Prior art keywords
semiconductor device
short
decrease
highly
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15335376A
Other languages
Japanese (ja)
Inventor
Kenji Natori
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15335376A priority Critical patent/JPS5378176A/en
Publication of JPS5378176A publication Critical patent/JPS5378176A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors

Abstract

PURPOSE:To obtain the device including the high-speed and highly-integrated inverter by using short-channel MOSFET whose threshold voltage will not decrease for driving and short-channel depletion-type FET for load.
JP15335376A 1976-12-22 1976-12-22 Semiconductor device Pending JPS5378176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15335376A JPS5378176A (en) 1976-12-22 1976-12-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15335376A JPS5378176A (en) 1976-12-22 1976-12-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5378176A true JPS5378176A (en) 1978-07-11

Family

ID=15560598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15335376A Pending JPS5378176A (en) 1976-12-22 1976-12-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5378176A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681974A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of mos type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681974A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of mos type semiconductor device

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