JPS54129984A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54129984A
JPS54129984A JP3785078A JP3785078A JPS54129984A JP S54129984 A JPS54129984 A JP S54129984A JP 3785078 A JP3785078 A JP 3785078A JP 3785078 A JP3785078 A JP 3785078A JP S54129984 A JPS54129984 A JP S54129984A
Authority
JP
Japan
Prior art keywords
channel
film
type
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3785078A
Other languages
Japanese (ja)
Inventor
Koichi Nishiuchi
Shigeru Fujii
Tetsuo Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3785078A priority Critical patent/JPS54129984A/en
Publication of JPS54129984A publication Critical patent/JPS54129984A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a high-speed and high-dielectric-strength device by providing a channel layer, obtained through ion injection through an insulation thin-film mask, and a source-drain layer of high density at an opening part.
CONSTITUTION: On p-type Si substrate 11, thick oxide film 20 and thin film 22 are formed selectively and through n-type ion injection with a window made in the thin film, n+-type source and drain 12 and 13 at the opening part and shallow n-type channel 14 under film 22 are formed. The thickness of the channel is adjusted by a gate electrode material. Next, Pt gate electrode 18 is provided and the depletion layer formed by the work function difference with channel 14 cuts off the channel. Electrode 18 is made away from drain 13 ot reduce the parasitic capacity and also to soften the concentration of an electric field with high dielectric strength, and it is also close to or overlapped with source layer 12 to reduce the channel parasitic resistance at the source side, thereby obtaining hith-speed operation. Lastly, the surface is covered with insulation film 25, which is provided with an selective window, and Al electrodes 17, 19 and 26 are provided.
COPYRIGHT: (C)1979,JPO&Japio
JP3785078A 1978-03-31 1978-03-31 Manufacture of semiconductor device Pending JPS54129984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3785078A JPS54129984A (en) 1978-03-31 1978-03-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3785078A JPS54129984A (en) 1978-03-31 1978-03-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54129984A true JPS54129984A (en) 1979-10-08

Family

ID=12509001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3785078A Pending JPS54129984A (en) 1978-03-31 1978-03-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54129984A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01502634A (en) * 1986-09-18 1989-09-07 イーストマン・コダック・カンパニー Image sensor output circuit
WO1999017371A1 (en) * 1997-09-26 1999-04-08 Thunderbird Technologies, Inc. Metal gate fermi-threshold field effect transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921079A (en) * 1972-06-15 1974-02-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921079A (en) * 1972-06-15 1974-02-25

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01502634A (en) * 1986-09-18 1989-09-07 イーストマン・コダック・カンパニー Image sensor output circuit
WO1999017371A1 (en) * 1997-09-26 1999-04-08 Thunderbird Technologies, Inc. Metal gate fermi-threshold field effect transistors

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