JPS54114081A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS54114081A
JPS54114081A JP2065478A JP2065478A JPS54114081A JP S54114081 A JPS54114081 A JP S54114081A JP 2065478 A JP2065478 A JP 2065478A JP 2065478 A JP2065478 A JP 2065478A JP S54114081 A JPS54114081 A JP S54114081A
Authority
JP
Japan
Prior art keywords
film
region
type
electron beam
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2065478A
Other languages
Japanese (ja)
Other versions
JPS6210033B2 (en
Inventor
Hideo Yoshino
Toshio Kobayashi
Eisuke Arai
Yutaka Sakakibara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2065478A priority Critical patent/JPS54114081A/en
Publication of JPS54114081A publication Critical patent/JPS54114081A/en
Publication of JPS6210033B2 publication Critical patent/JPS6210033B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To control the threshold voltage of the MIS-type FET without using the impurity density to the diffusion region or the thickness of the insulator film as the parameter but by making remain the electric charge caused through irradiation of the electron beam to the insulator film formed on the semiconductor substrate.
CONSTITUTION: Thick field SiO2 film 6 is formed across P-type Si substrate 1, and then N-type source region and N-type drain region 3 are formed by diffusion within substrate 1. Then gate SiO2 film 4 is coated on the entire surface including these two regions, and poly-crystal Si gate layer 5 containing the N-type impurity is formed between region 2 and 3 and on film 4. After this, the opening is drilled to film 4, and Mo conducting layer 8 and 9 are coated on region 2 and 3 via SiO2 film 7. Thus, the electron beam is irradiated to film 4, and only the hole is made to remain among the electron holes thus caused within film 4. As a result, the threshold voltage can be controlled with just irradiation of the electron beam.
COPYRIGHT: (C)1979,JPO&Japio
JP2065478A 1978-02-24 1978-02-24 Semiconductor integrated circuit device Granted JPS54114081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2065478A JPS54114081A (en) 1978-02-24 1978-02-24 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2065478A JPS54114081A (en) 1978-02-24 1978-02-24 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS54114081A true JPS54114081A (en) 1979-09-05
JPS6210033B2 JPS6210033B2 (en) 1987-03-04

Family

ID=12033195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2065478A Granted JPS54114081A (en) 1978-02-24 1978-02-24 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS54114081A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147773A (en) * 1985-12-20 1987-07-01 Nec Corp Manufacture of semiconductor device
JPS63221632A (en) * 1987-03-10 1988-09-14 Nec Corp Manufacture of semiconductor device
JPH0335531A (en) * 1989-07-03 1991-02-15 Tokyo Gas Co Ltd Manufacture of mos transistor and integrated circuit

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES=1968 *
IEEE TRANSACTIONS ON NUCLEAR SCIENCE=1975 *
IEEE TRANSACTIONS ON NUELEAR SCIENCE=1976 *
PROCEEDINGS OF THE IEEE=1967 *
RCA REVIEW 28=1976 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147773A (en) * 1985-12-20 1987-07-01 Nec Corp Manufacture of semiconductor device
JPS63221632A (en) * 1987-03-10 1988-09-14 Nec Corp Manufacture of semiconductor device
JPH0335531A (en) * 1989-07-03 1991-02-15 Tokyo Gas Co Ltd Manufacture of mos transistor and integrated circuit

Also Published As

Publication number Publication date
JPS6210033B2 (en) 1987-03-04

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