JPS5443688A - Production of semiconductor integrated circuit unit - Google Patents
Production of semiconductor integrated circuit unitInfo
- Publication number
- JPS5443688A JPS5443688A JP10987777A JP10987777A JPS5443688A JP S5443688 A JPS5443688 A JP S5443688A JP 10987777 A JP10987777 A JP 10987777A JP 10987777 A JP10987777 A JP 10987777A JP S5443688 A JPS5443688 A JP S5443688A
- Authority
- JP
- Japan
- Prior art keywords
- type
- area
- layer
- diffusion
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To make dielectric strength higher and avoid the irregularity of the threshold voltage by removing slightly the substrate surface, which includes the well area constituting an NPN transistor, by etching to remove the high-impurity concentration layer on the surface and making the surface concentration distribution uniform.
CONSTITUTION: SiO2 film 2 is caused to adhere onto P type Si substrate 1, and an open hole is provided to form N+ type buried area 3 by diffusion, and P type layer 4 is grown epitaxially throughout the surface. Next, the all surface is covered with SiO2 film 5 to open window 6 on area 3, and N+ type ion injection area 7 is provided in layer 4, and N- type well 8 which reaches area 3 is formed by extending diffusion. After that, generated SiO2 film 9 and exposed surface layer 10 of layer 4 are removed by etching, and SiO2 film 11 is newly grown. Next, an open hole is provided in the position apart from area 8, and N type channel area 12 is formed by diffusion, and P+ type gate leading-out part 14 and N+ type souce drain leading- out parts 17 and 18 are provided in area 12. After that, N+ type emitter and N+ type collector leading-out parts 15 and 16 are formed respectively in area 8 by diffusion.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10987777A JPS5443688A (en) | 1977-09-14 | 1977-09-14 | Production of semiconductor integrated circuit unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10987777A JPS5443688A (en) | 1977-09-14 | 1977-09-14 | Production of semiconductor integrated circuit unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5443688A true JPS5443688A (en) | 1979-04-06 |
JPS6143858B2 JPS6143858B2 (en) | 1986-09-30 |
Family
ID=14521427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10987777A Granted JPS5443688A (en) | 1977-09-14 | 1977-09-14 | Production of semiconductor integrated circuit unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5443688A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55146960A (en) * | 1979-05-02 | 1980-11-15 | Hitachi Ltd | Manufacture of integrated circuit device |
US4484388A (en) * | 1982-06-23 | 1984-11-27 | Tokyo Shibaura Denki Kabushiki Kaishi | Method for manufacturing semiconductor Bi-CMOS device |
JPH03114235A (en) * | 1989-05-22 | 1991-05-15 | Toshiba Corp | Semiconductor device containing charge transfer device and its manufacture |
US5156984A (en) * | 1987-12-31 | 1992-10-20 | Goldstar Co., Ltd. | Manufacturing method for a bi-cmos by trenching |
-
1977
- 1977-09-14 JP JP10987777A patent/JPS5443688A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55146960A (en) * | 1979-05-02 | 1980-11-15 | Hitachi Ltd | Manufacture of integrated circuit device |
US4484388A (en) * | 1982-06-23 | 1984-11-27 | Tokyo Shibaura Denki Kabushiki Kaishi | Method for manufacturing semiconductor Bi-CMOS device |
US5156984A (en) * | 1987-12-31 | 1992-10-20 | Goldstar Co., Ltd. | Manufacturing method for a bi-cmos by trenching |
JPH03114235A (en) * | 1989-05-22 | 1991-05-15 | Toshiba Corp | Semiconductor device containing charge transfer device and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS6143858B2 (en) | 1986-09-30 |
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