JPS57160171A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57160171A
JPS57160171A JP4555581A JP4555581A JPS57160171A JP S57160171 A JPS57160171 A JP S57160171A JP 4555581 A JP4555581 A JP 4555581A JP 4555581 A JP4555581 A JP 4555581A JP S57160171 A JPS57160171 A JP S57160171A
Authority
JP
Japan
Prior art keywords
mask
source
gaas layer
ion
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4555581A
Other languages
Japanese (ja)
Inventor
Tadashi Fukuzawa
Hisao Nakajima
Nobutoshi Matsunaga
Susumu Takahashi
Michiharu Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4555581A priority Critical patent/JPS57160171A/en
Publication of JPS57160171A publication Critical patent/JPS57160171A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To facilitate the integration, by using ion implantation method for the formation of an insular impurity region serving as a source or drain. CONSTITUTION:N type impurity with high density is implanted into the position of the attachment of a source and drain electrodes by ion beam 13, after the formation of semi-insulating GaAs layer 2, GaAs layer 3, Ga0.7Al0.3 As layer 4, GaAs layer 5 and mask 12 on a substrate 1. After the mask 12 is removed, the mask 12 is formed again with the implantation of Se ion 14 to form an n type channel 7. Next, a source drain electrodes and gate electrode, etc. are formed by a usual method.
JP4555581A 1981-03-30 1981-03-30 Manufacture of semiconductor device Pending JPS57160171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4555581A JPS57160171A (en) 1981-03-30 1981-03-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4555581A JPS57160171A (en) 1981-03-30 1981-03-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57160171A true JPS57160171A (en) 1982-10-02

Family

ID=12722600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4555581A Pending JPS57160171A (en) 1981-03-30 1981-03-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57160171A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123271A (en) * 1982-12-28 1984-07-17 Fujitsu Ltd Manufacture of compound semiconductor device
JPS60223171A (en) * 1984-04-19 1985-11-07 Nec Corp Field-effect transistor
JPH06236898A (en) * 1993-01-14 1994-08-23 Nec Corp Field-effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123271A (en) * 1982-12-28 1984-07-17 Fujitsu Ltd Manufacture of compound semiconductor device
JPS60223171A (en) * 1984-04-19 1985-11-07 Nec Corp Field-effect transistor
JPH0783107B2 (en) * 1984-04-19 1995-09-06 日本電気株式会社 Field effect transistor
JPH06236898A (en) * 1993-01-14 1994-08-23 Nec Corp Field-effect transistor

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