JPS57172775A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57172775A JPS57172775A JP5622781A JP5622781A JPS57172775A JP S57172775 A JPS57172775 A JP S57172775A JP 5622781 A JP5622781 A JP 5622781A JP 5622781 A JP5622781 A JP 5622781A JP S57172775 A JPS57172775 A JP S57172775A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- ion implantation
- gaas
- furthermore
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 4
- 238000005468 ion implantation Methods 0.000 abstract 4
- 238000000137 annealing Methods 0.000 abstract 2
- 230000009977 dual effect Effects 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain good cross modulation characteristics by a method wherein annealing is applied to a shottky-type dual gate FET active layer after forming the active layer by at least two-stage ion implantation when the active layer is formed by using GaAs and furthermore, the maximum carrier concentration position generated by the ion implantation is located around the surface of the active layer. CONSTITUTION:An N type GaAs active layer 2 is formed on a semiinsulating GaAs substrate 1 and a source electrode 3 and a drain electrode 4 are provided in parallel on the layer 2 and in the same way, the first and the second gate electrodes 5, 6 are formed in parallel between the electrodes 3 and 4 to form a dual gate FET. In this composition, N type impurity ions are implanted to the grown GaAs layer by dividing the ion implantation into at least two stages to form the layer 2. Furthermore, the maximum carrier concentration position generated by the ion implantation is located around the surface layer section of the layer 2. Then, annealing treatment is applied to the layer 2. In this way, cross modulation characteristics which are equal to or better than those obtained by using Si can be obtained. Furthermore, the semiconductor device becomes suitable for mass production.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5622781A JPS57172775A (en) | 1981-04-16 | 1981-04-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5622781A JPS57172775A (en) | 1981-04-16 | 1981-04-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57172775A true JPS57172775A (en) | 1982-10-23 |
Family
ID=13021214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5622781A Pending JPS57172775A (en) | 1981-04-16 | 1981-04-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57172775A (en) |
-
1981
- 1981-04-16 JP JP5622781A patent/JPS57172775A/en active Pending
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