JPS57178376A - Junction type field-effect transistor - Google Patents
Junction type field-effect transistorInfo
- Publication number
- JPS57178376A JPS57178376A JP6490581A JP6490581A JPS57178376A JP S57178376 A JPS57178376 A JP S57178376A JP 6490581 A JP6490581 A JP 6490581A JP 6490581 A JP6490581 A JP 6490581A JP S57178376 A JPS57178376 A JP S57178376A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- film
- source
- mask
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Abstract
PURPOSE:To shorten gate length, and to reduce resistance between a gate and a source by forming a gate electrode and an impurity region under the gate electrode by using the same mask while shaping operating layers between the gate and both the source and a drain by employing the gate electrode as a mask. CONSTITUTION:An N type GaAs operating layer 2 and N<+> regions 4, 5 are formed to a semi-insulating GaAs crystal 1, and an Si3N4 film 9 and a resist film 10 are shaped onto them. A window section is molded to the resist film 10, and the Si3N4 film 9 exposed is removed through etching. A P<+> region 3 is formed by implanting P type impurity ions while using the film 9, 10 as the masks, and metallic films 7, 11 are shaped by evaporating a metal having the high melting point under vacuum. The reist film 10 and the metallic film 11 are removed, N type impurity ions are implanted employing the gate metallic film 7 as the mask, and the operating layers 12, 13 between both the gate and the source and both the gate and the drain are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6490581A JPS57178376A (en) | 1981-04-27 | 1981-04-27 | Junction type field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6490581A JPS57178376A (en) | 1981-04-27 | 1981-04-27 | Junction type field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57178376A true JPS57178376A (en) | 1982-11-02 |
Family
ID=13271536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6490581A Pending JPS57178376A (en) | 1981-04-27 | 1981-04-27 | Junction type field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57178376A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0158752A2 (en) * | 1984-04-18 | 1985-10-23 | Kabushiki Kaisha Toshiba | Method of producing a GaAs JFET with self-aligned p-type gate |
EP0311109A2 (en) * | 1987-10-08 | 1989-04-12 | Kabushiki Kaisha Toshiba | Method of manufacturing a field-effect transistor having a junction gate |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5037381A (en) * | 1973-08-06 | 1975-04-08 | ||
JPS50115782A (en) * | 1974-02-22 | 1975-09-10 | ||
JPS5315081A (en) * | 1976-07-27 | 1978-02-10 | Nec Corp | Junction type field effect transistor and its production |
JPS5626474A (en) * | 1979-08-13 | 1981-03-14 | Hitachi Ltd | Junction type field effect semiconductor device |
-
1981
- 1981-04-27 JP JP6490581A patent/JPS57178376A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5037381A (en) * | 1973-08-06 | 1975-04-08 | ||
JPS50115782A (en) * | 1974-02-22 | 1975-09-10 | ||
JPS5315081A (en) * | 1976-07-27 | 1978-02-10 | Nec Corp | Junction type field effect transistor and its production |
JPS5626474A (en) * | 1979-08-13 | 1981-03-14 | Hitachi Ltd | Junction type field effect semiconductor device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0158752A2 (en) * | 1984-04-18 | 1985-10-23 | Kabushiki Kaisha Toshiba | Method of producing a GaAs JFET with self-aligned p-type gate |
EP0311109A2 (en) * | 1987-10-08 | 1989-04-12 | Kabushiki Kaisha Toshiba | Method of manufacturing a field-effect transistor having a junction gate |
JPH0195564A (en) * | 1987-10-08 | 1989-04-13 | Toshiba Corp | Manufacture of semiconductor device |
US4895811A (en) * | 1987-10-08 | 1990-01-23 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
JPH0543291B2 (en) * | 1987-10-08 | 1993-07-01 | Tokyo Shibaura Electric Co |
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