JPS57152168A - Manufacture of schottky barrier gate field effect transistor - Google Patents
Manufacture of schottky barrier gate field effect transistorInfo
- Publication number
- JPS57152168A JPS57152168A JP3698681A JP3698681A JPS57152168A JP S57152168 A JPS57152168 A JP S57152168A JP 3698681 A JP3698681 A JP 3698681A JP 3698681 A JP3698681 A JP 3698681A JP S57152168 A JPS57152168 A JP S57152168A
- Authority
- JP
- Japan
- Prior art keywords
- film
- source
- alloys
- metal
- schottky barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Abstract
PURPOSE:To reduce the gate resistance manufacturing the GaAs Schottky barrier gate FET by a method wherein a gate electrode and an N<+> region of source and drain are subjected implantation making use of self-alignment process. CONSTITUTION:The first metallic film 41 containing a metal such as Nb, Mo, W and the like or the alloys thereof or the other alloys containing 20atm% or less of a metal such as Ti, Cr, Zr and the like in addition to the said metals or alloys is formed on an N type channel layer 12 formed on a high resistant GaAs substrate 11 and the second metallic layer 42 is formed on the said film 41 into the size larger than that of the film 41 while the ion 43 of the donor impurity is implanted in the source and drain regions 44 and 45. Then the surface is annealed through the intermediary of the surface protecting film 46 to activate the implanted ion forming the N<+> regions 13 and 14. Next the surface protecting film 46 is removed and the first metal layer 41 is side etched faster than the second metal layer 42 to form the gate electrode 15 and further the source and drain electrodes 16 and 17.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3698681A JPS57152168A (en) | 1981-03-13 | 1981-03-13 | Manufacture of schottky barrier gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3698681A JPS57152168A (en) | 1981-03-13 | 1981-03-13 | Manufacture of schottky barrier gate field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57152168A true JPS57152168A (en) | 1982-09-20 |
JPH0212015B2 JPH0212015B2 (en) | 1990-03-16 |
Family
ID=12485066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3698681A Granted JPS57152168A (en) | 1981-03-13 | 1981-03-13 | Manufacture of schottky barrier gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57152168A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0128751A2 (en) * | 1983-06-13 | 1984-12-19 | Kabushiki Kaisha Toshiba | Manufacturing method of Schottky gate FET |
JPS6081872A (en) * | 1983-10-11 | 1985-05-09 | Oki Electric Ind Co Ltd | Manufacture of semiconductor element |
JPS60115268A (en) * | 1983-11-28 | 1985-06-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6143481A (en) * | 1984-08-08 | 1986-03-03 | Oki Electric Ind Co Ltd | Manufacture of schottky gate field effect transistor |
JPS6155966A (en) * | 1984-08-27 | 1986-03-20 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
EP0220605A2 (en) * | 1985-10-21 | 1987-05-06 | Itt Industries, Inc. | Method of making self-aligned GaAs digital integrated circuits |
FR2682534A1 (en) * | 1991-10-14 | 1993-04-16 | Mitsubishi Electric Corp | SEMICONDUCTOR DEVICE HAVING A STACK OF GRID ELECTRODE SECTIONS, AND METHOD FOR MANUFACTURING THE DEVICE. |
-
1981
- 1981-03-13 JP JP3698681A patent/JPS57152168A/en active Granted
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0128751A2 (en) * | 1983-06-13 | 1984-12-19 | Kabushiki Kaisha Toshiba | Manufacturing method of Schottky gate FET |
JPS6081872A (en) * | 1983-10-11 | 1985-05-09 | Oki Electric Ind Co Ltd | Manufacture of semiconductor element |
JPS60115268A (en) * | 1983-11-28 | 1985-06-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0213929B2 (en) * | 1983-11-28 | 1990-04-05 | Fujitsu Ltd | |
JPS6143481A (en) * | 1984-08-08 | 1986-03-03 | Oki Electric Ind Co Ltd | Manufacture of schottky gate field effect transistor |
JPS6155966A (en) * | 1984-08-27 | 1986-03-20 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
EP0220605A2 (en) * | 1985-10-21 | 1987-05-06 | Itt Industries, Inc. | Method of making self-aligned GaAs digital integrated circuits |
FR2682534A1 (en) * | 1991-10-14 | 1993-04-16 | Mitsubishi Electric Corp | SEMICONDUCTOR DEVICE HAVING A STACK OF GRID ELECTRODE SECTIONS, AND METHOD FOR MANUFACTURING THE DEVICE. |
US5384479A (en) * | 1991-10-14 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with T-shaped gate electrode |
US5462884A (en) * | 1991-10-14 | 1995-10-31 | Mitsubishi Denki Kabushiki Kaisha | Method of making field effect transistor with T-shaped gate electrode |
Also Published As
Publication number | Publication date |
---|---|
JPH0212015B2 (en) | 1990-03-16 |
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