JPS5723223A - Manufacture of compound semiconductor device - Google Patents
Manufacture of compound semiconductor deviceInfo
- Publication number
- JPS5723223A JPS5723223A JP9840180A JP9840180A JPS5723223A JP S5723223 A JPS5723223 A JP S5723223A JP 9840180 A JP9840180 A JP 9840180A JP 9840180 A JP9840180 A JP 9840180A JP S5723223 A JPS5723223 A JP S5723223A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- evaporated
- laser beam
- compound semiconductor
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Abstract
PURPOSE:To obtain ohmic electrodes of a compound semiconductor device by a method wherein after N type or P type impurity ions are implanted in the specified regions of the compound semiconductor substrate, it is heat treated by a laser beam in a vacuum, and a metal is evaporated in succession. CONSTITUTION:An Si3N4 thin layer 3 is provided in an N type epitaxial layer 2 on the semi-insulating GaAs substrate 1 by reactive sputtering opening are formed and Se ions are implanted to the intended regions for source and drain in the room temperature. Then the Si3N4 layer 3 on the gate region is etched to be removed. The substrate is put in a vacuum treatment cabinet, and when it is irradiated with Nd YAG laser beam of 0.3J/cm<2> for 30nsec, Se is activated to form the source and drain 4'. The shutter is opened in the same device without breaking the vacuum and the preliminary arranged metal 5 is evaporated at once. Because the oxide on the surface of the substrate is evaporated by irradiation of the laser beam and the surface is cleaned, contact resistance is low. After then it is taken out from the device, and the FET is completed in accordance with the usual method. By this constitution, the ohmic electrodes having low contact resistance can be obtained without alloying.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9840180A JPS5723223A (en) | 1980-07-18 | 1980-07-18 | Manufacture of compound semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9840180A JPS5723223A (en) | 1980-07-18 | 1980-07-18 | Manufacture of compound semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5723223A true JPS5723223A (en) | 1982-02-06 |
Family
ID=14218803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9840180A Pending JPS5723223A (en) | 1980-07-18 | 1980-07-18 | Manufacture of compound semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5723223A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5772322A (en) * | 1980-08-28 | 1982-05-06 | Siemens Ag | Method of generating alloyed metallic contact layer to surface of semiconductor |
JPS59222935A (en) * | 1983-06-01 | 1984-12-14 | Matsushita Electric Ind Co Ltd | Manufacture of gaas semiconductor device |
JPS59232413A (en) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | Method of manufacturing semiconductor device and facilities for manufacturing the same |
JPS61248525A (en) * | 1985-04-26 | 1986-11-05 | Toshiba Corp | Manufacture of semiconductor device |
JPS6242436A (en) * | 1985-08-19 | 1987-02-24 | Sony Corp | Manufacture of semiconductor device |
JPS6295874A (en) * | 1985-10-23 | 1987-05-02 | Sony Corp | Manufacture of semiconductor device |
JPH07232597A (en) * | 1993-09-24 | 1995-09-05 | Happich Fahrzeug Dachsyst Gmbh | Supporting leg for supporting end of rail pipe on vehicular roof |
JP2004335815A (en) * | 2003-05-09 | 2004-11-25 | Mitsubishi Electric Corp | Manufacturing method of silicon carbide schottky barrier diode |
-
1980
- 1980-07-18 JP JP9840180A patent/JPS5723223A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5772322A (en) * | 1980-08-28 | 1982-05-06 | Siemens Ag | Method of generating alloyed metallic contact layer to surface of semiconductor |
JPS59222935A (en) * | 1983-06-01 | 1984-12-14 | Matsushita Electric Ind Co Ltd | Manufacture of gaas semiconductor device |
JPS59232413A (en) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | Method of manufacturing semiconductor device and facilities for manufacturing the same |
JPS61248525A (en) * | 1985-04-26 | 1986-11-05 | Toshiba Corp | Manufacture of semiconductor device |
JPS6242436A (en) * | 1985-08-19 | 1987-02-24 | Sony Corp | Manufacture of semiconductor device |
JPS6295874A (en) * | 1985-10-23 | 1987-05-02 | Sony Corp | Manufacture of semiconductor device |
JPH07232597A (en) * | 1993-09-24 | 1995-09-05 | Happich Fahrzeug Dachsyst Gmbh | Supporting leg for supporting end of rail pipe on vehicular roof |
JP2004335815A (en) * | 2003-05-09 | 2004-11-25 | Mitsubishi Electric Corp | Manufacturing method of silicon carbide schottky barrier diode |
JP4506100B2 (en) * | 2003-05-09 | 2010-07-21 | 三菱電機株式会社 | Method for manufacturing silicon carbide Schottky barrier diode |
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