JPS5723223A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS5723223A
JPS5723223A JP9840180A JP9840180A JPS5723223A JP S5723223 A JPS5723223 A JP S5723223A JP 9840180 A JP9840180 A JP 9840180A JP 9840180 A JP9840180 A JP 9840180A JP S5723223 A JPS5723223 A JP S5723223A
Authority
JP
Japan
Prior art keywords
substrate
evaporated
laser beam
compound semiconductor
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9840180A
Other languages
Japanese (ja)
Inventor
Hidetoshi Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9840180A priority Critical patent/JPS5723223A/en
Publication of JPS5723223A publication Critical patent/JPS5723223A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain ohmic electrodes of a compound semiconductor device by a method wherein after N type or P type impurity ions are implanted in the specified regions of the compound semiconductor substrate, it is heat treated by a laser beam in a vacuum, and a metal is evaporated in succession. CONSTITUTION:An Si3N4 thin layer 3 is provided in an N type epitaxial layer 2 on the semi-insulating GaAs substrate 1 by reactive sputtering opening are formed and Se ions are implanted to the intended regions for source and drain in the room temperature. Then the Si3N4 layer 3 on the gate region is etched to be removed. The substrate is put in a vacuum treatment cabinet, and when it is irradiated with Nd YAG laser beam of 0.3J/cm<2> for 30nsec, Se is activated to form the source and drain 4'. The shutter is opened in the same device without breaking the vacuum and the preliminary arranged metal 5 is evaporated at once. Because the oxide on the surface of the substrate is evaporated by irradiation of the laser beam and the surface is cleaned, contact resistance is low. After then it is taken out from the device, and the FET is completed in accordance with the usual method. By this constitution, the ohmic electrodes having low contact resistance can be obtained without alloying.
JP9840180A 1980-07-18 1980-07-18 Manufacture of compound semiconductor device Pending JPS5723223A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9840180A JPS5723223A (en) 1980-07-18 1980-07-18 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9840180A JPS5723223A (en) 1980-07-18 1980-07-18 Manufacture of compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5723223A true JPS5723223A (en) 1982-02-06

Family

ID=14218803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9840180A Pending JPS5723223A (en) 1980-07-18 1980-07-18 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5723223A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772322A (en) * 1980-08-28 1982-05-06 Siemens Ag Method of generating alloyed metallic contact layer to surface of semiconductor
JPS59222935A (en) * 1983-06-01 1984-12-14 Matsushita Electric Ind Co Ltd Manufacture of gaas semiconductor device
JPS59232413A (en) * 1983-06-16 1984-12-27 Toshiba Corp Method of manufacturing semiconductor device and facilities for manufacturing the same
JPS61248525A (en) * 1985-04-26 1986-11-05 Toshiba Corp Manufacture of semiconductor device
JPS6242436A (en) * 1985-08-19 1987-02-24 Sony Corp Manufacture of semiconductor device
JPS6295874A (en) * 1985-10-23 1987-05-02 Sony Corp Manufacture of semiconductor device
JPH07232597A (en) * 1993-09-24 1995-09-05 Happich Fahrzeug Dachsyst Gmbh Supporting leg for supporting end of rail pipe on vehicular roof
JP2004335815A (en) * 2003-05-09 2004-11-25 Mitsubishi Electric Corp Manufacturing method of silicon carbide schottky barrier diode

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772322A (en) * 1980-08-28 1982-05-06 Siemens Ag Method of generating alloyed metallic contact layer to surface of semiconductor
JPS59222935A (en) * 1983-06-01 1984-12-14 Matsushita Electric Ind Co Ltd Manufacture of gaas semiconductor device
JPS59232413A (en) * 1983-06-16 1984-12-27 Toshiba Corp Method of manufacturing semiconductor device and facilities for manufacturing the same
JPS61248525A (en) * 1985-04-26 1986-11-05 Toshiba Corp Manufacture of semiconductor device
JPS6242436A (en) * 1985-08-19 1987-02-24 Sony Corp Manufacture of semiconductor device
JPS6295874A (en) * 1985-10-23 1987-05-02 Sony Corp Manufacture of semiconductor device
JPH07232597A (en) * 1993-09-24 1995-09-05 Happich Fahrzeug Dachsyst Gmbh Supporting leg for supporting end of rail pipe on vehicular roof
JP2004335815A (en) * 2003-05-09 2004-11-25 Mitsubishi Electric Corp Manufacturing method of silicon carbide schottky barrier diode
JP4506100B2 (en) * 2003-05-09 2010-07-21 三菱電機株式会社 Method for manufacturing silicon carbide Schottky barrier diode

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