JPS56157023A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56157023A
JPS56157023A JP6086480A JP6086480A JPS56157023A JP S56157023 A JPS56157023 A JP S56157023A JP 6086480 A JP6086480 A JP 6086480A JP 6086480 A JP6086480 A JP 6086480A JP S56157023 A JPS56157023 A JP S56157023A
Authority
JP
Japan
Prior art keywords
impurities
semiconductor device
irradiation
activation
covered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6086480A
Other languages
Japanese (ja)
Inventor
Nobuo Sasaki
Noriaki Sato
Tsutomu Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6086480A priority Critical patent/JPS56157023A/en
Publication of JPS56157023A publication Critical patent/JPS56157023A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To perform the activation of impurities for subject semiconductor device without giving deterioration on the characteristics of its element by a method wherein a laser annealing is performed after all area of a semiconductor substrate, excluding the surface where an impurity region was formed, has been covered by Mo, W and the like. CONSTITUTION:After the diffusion regions 6 and 7 (ion implanted regions) of impurities such as a source drain and the like have been formed on an Si substrate 1, high-melting point metals 4 and 5 such as Mo, W and the like are covered on a field oxide film 2 and a gate oxide film 3 and then the impurities are activated by performing an annealing with the irradiation of a laser beam. Through these procedures, the mask metal is not fused when the laser beam is irradiation and the activation of impurities can be performed efficiently without deteriorating the semiconductor device.
JP6086480A 1980-05-08 1980-05-08 Manufacture of semiconductor device Pending JPS56157023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6086480A JPS56157023A (en) 1980-05-08 1980-05-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6086480A JPS56157023A (en) 1980-05-08 1980-05-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56157023A true JPS56157023A (en) 1981-12-04

Family

ID=13154674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6086480A Pending JPS56157023A (en) 1980-05-08 1980-05-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56157023A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130554A (en) * 1982-01-28 1983-08-04 Toshiba Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534416A (en) * 1978-09-01 1980-03-11 Hitachi Ltd Method of manufacturing semiconductor device
JPS5546503A (en) * 1978-09-28 1980-04-01 Toshiba Corp Method of making semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534416A (en) * 1978-09-01 1980-03-11 Hitachi Ltd Method of manufacturing semiconductor device
JPS5546503A (en) * 1978-09-28 1980-04-01 Toshiba Corp Method of making semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130554A (en) * 1982-01-28 1983-08-04 Toshiba Corp Manufacture of semiconductor device

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