JPS5745246A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5745246A JPS5745246A JP12007080A JP12007080A JPS5745246A JP S5745246 A JPS5745246 A JP S5745246A JP 12007080 A JP12007080 A JP 12007080A JP 12007080 A JP12007080 A JP 12007080A JP S5745246 A JPS5745246 A JP S5745246A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- annealed
- annealing
- substance
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 230000004913 activation Effects 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- -1 arsenic ions Chemical class 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To prevent the damage of a substance with the low melting point of wiring, etc. by once cooling a substrate and annealing it when the activation of an impurity region or heat treatment such as glass flowing are conducted through laser beams or electron beams. CONSTITUTION:A field insulating film 2, a gate insulating film 3, an Al gate electrode 4 and n<+> type source and drain rgions 5, 6 into which arsenic ions are injected are formed to the p type Si substrate 1. Before the n<+> type source and drain regions 5, 6 are activated through annealing by lasers, the whole substrate is cooled to 0 deg.C or lower such as the temperature 77 deg.K of liquid nitrogen, and the regions are annealed through laser beams L. Accordingly, the substrate can be annealed through particle beams without damaging an Al gate electrode, the substance with the low melting point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12007080A JPS5745246A (en) | 1980-08-30 | 1980-08-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12007080A JPS5745246A (en) | 1980-08-30 | 1980-08-30 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5745246A true JPS5745246A (en) | 1982-03-15 |
| JPS6333292B2 JPS6333292B2 (en) | 1988-07-05 |
Family
ID=14777142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12007080A Granted JPS5745246A (en) | 1980-08-30 | 1980-08-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5745246A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS595624A (en) * | 1982-07-01 | 1984-01-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP2006032426A (en) * | 2004-07-12 | 2006-02-02 | Sony Corp | Manufacturing method of semiconductor device |
-
1980
- 1980-08-30 JP JP12007080A patent/JPS5745246A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS595624A (en) * | 1982-07-01 | 1984-01-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP2006032426A (en) * | 2004-07-12 | 2006-02-02 | Sony Corp | Manufacturing method of semiconductor device |
| JP4556520B2 (en) * | 2004-07-12 | 2010-10-06 | ソニー株式会社 | Manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6333292B2 (en) | 1988-07-05 |
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