JPS57136372A - Manufacture of mos type field effect semiconductor device - Google Patents

Manufacture of mos type field effect semiconductor device

Info

Publication number
JPS57136372A
JPS57136372A JP2239381A JP2239381A JPS57136372A JP S57136372 A JPS57136372 A JP S57136372A JP 2239381 A JP2239381 A JP 2239381A JP 2239381 A JP2239381 A JP 2239381A JP S57136372 A JPS57136372 A JP S57136372A
Authority
JP
Japan
Prior art keywords
gate electrode
manufacture
semiconductor device
field effect
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2239381A
Other languages
Japanese (ja)
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2239381A priority Critical patent/JPS57136372A/en
Priority to EP82300741A priority patent/EP0058548B1/en
Priority to DE8282300741T priority patent/DE3272410D1/en
Publication of JPS57136372A publication Critical patent/JPS57136372A/en
Priority to US06/722,741 priority patent/US4646426A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce resistance and attain a high speed operation without any damage on a gate electrode by a method wherein source and drain regions are formed by self-alignment method using an Al-gate electrode as a mask, and these regions are annealed by irradiation of a laser light. CONSTITUTION:On a p type Si substrate 1 which contains a field insulation film 2 and a gate insulation film 3, an Al-gate electrode 4 is formed, and by using it as a mask, source and drain regions 5, 6 are formed. By irradiation of a laser light, annealing of source and drain regions 5, 6 is performed. Because the reflection factor of Al is high, annealing can be done without any temperature rise on the Al-gate electrode in spite of irradiation of laser light. By this method an Al-gate electrode with a low resistance can be fabricated.
JP2239381A 1981-02-16 1981-02-18 Manufacture of mos type field effect semiconductor device Pending JPS57136372A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2239381A JPS57136372A (en) 1981-02-18 1981-02-18 Manufacture of mos type field effect semiconductor device
EP82300741A EP0058548B1 (en) 1981-02-16 1982-02-15 Method of producing mosfet type semiconductor device
DE8282300741T DE3272410D1 (en) 1981-02-16 1982-02-15 Method of producing mosfet type semiconductor device
US06/722,741 US4646426A (en) 1981-02-16 1985-04-08 Method of producing MOS FET type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2239381A JPS57136372A (en) 1981-02-18 1981-02-18 Manufacture of mos type field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS57136372A true JPS57136372A (en) 1982-08-23

Family

ID=12081410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2239381A Pending JPS57136372A (en) 1981-02-16 1981-02-18 Manufacture of mos type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS57136372A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567132A (en) * 1978-11-15 1980-05-21 Toshiba Corp Method for manufacturing semiconductor device
JPS55165679A (en) * 1979-06-13 1980-12-24 Toshiba Corp Preparation of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567132A (en) * 1978-11-15 1980-05-21 Toshiba Corp Method for manufacturing semiconductor device
JPS55165679A (en) * 1979-06-13 1980-12-24 Toshiba Corp Preparation of semiconductor device

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