JPS5567132A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device

Info

Publication number
JPS5567132A
JPS5567132A JP14084378A JP14084378A JPS5567132A JP S5567132 A JPS5567132 A JP S5567132A JP 14084378 A JP14084378 A JP 14084378A JP 14084378 A JP14084378 A JP 14084378A JP S5567132 A JPS5567132 A JP S5567132A
Authority
JP
Japan
Prior art keywords
layers
laser beam
implanted
pulse width
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14084378A
Other languages
Japanese (ja)
Inventor
Takashi Shigematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14084378A priority Critical patent/JPS5567132A/en
Publication of JPS5567132A publication Critical patent/JPS5567132A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To effectively eliminate defects which are caused when impurity ions are implanted into a semiconductor substrate, by sequentially projecting a laser beam of high output and short pulse width and another laser beam of low output and long pulse width in arbitrary order upon the implanted part of the substrate after the implantation to anneal the implanted part.
CONSTITUTION: Field SiO2 films 2 are produced on both the ends of a p--type Si substrate 1. A gate oxide film 3 and a gate electrode 4 are provided on a device zone. Ions of As are implanted into the exposed part of the substrate 1 to produce ion-implanted layers 5, which are to be a source and a drain. An Nd-YAG laser beam of 30 nanoseconds in pulse width and about 33 MW output is projected upon the layers 5 while the energy intensity of the laser beam is maintained at about 1J/cm2, thereby firstly annealing the layers. Another Nd-YAG laser beam of 500 nanoseconds in pulse width, 20 MW in output and 10J/cm2 in energy intensity is then projected upon the layers, thereby secondly annealing them. The layers 5 are thus changed into n+-type regions 6, 7. In that case, an amorphous layer produced before is recrystallized and the properties are improved.
COPYRIGHT: (C)1980,JPO&Japio
JP14084378A 1978-11-15 1978-11-15 Method for manufacturing semiconductor device Pending JPS5567132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14084378A JPS5567132A (en) 1978-11-15 1978-11-15 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14084378A JPS5567132A (en) 1978-11-15 1978-11-15 Method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5567132A true JPS5567132A (en) 1980-05-21

Family

ID=15277999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14084378A Pending JPS5567132A (en) 1978-11-15 1978-11-15 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5567132A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136372A (en) * 1981-02-18 1982-08-23 Fujitsu Ltd Manufacture of mos type field effect semiconductor device
US5232674A (en) * 1989-12-20 1993-08-03 Fujitsu Limited Method of improving surface morphology of laser irradiated surface
JPH05206049A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Ion implantation method and ion implantation device
US5304357A (en) * 1991-05-15 1994-04-19 Ricoh Co. Ltd. Apparatus for zone melting recrystallization of thin semiconductor film
US5474940A (en) * 1992-01-08 1995-12-12 Sony Corporation Method of fabricating a semiconductor device having shallow junctions in source-drain regions and a gate electrode with a low resistance silicide layer
US5496768A (en) * 1993-12-03 1996-03-05 Casio Computer Co., Ltd. Method of manufacturing polycrystalline silicon thin film
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6054739A (en) * 1994-12-16 2000-04-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having channel refractive index in first and second directions
US6204099B1 (en) 1995-02-21 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6410374B1 (en) 1992-12-26 2002-06-25 Semiconductor Energy Laborartory Co., Ltd. Method of crystallizing a semiconductor layer in a MIS transistor
JP2003059856A (en) * 2001-08-09 2003-02-28 Fuji Electric Co Ltd Method of manufacturing semiconductor
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
JP2004039984A (en) * 2002-07-05 2004-02-05 Sumitomo Heavy Ind Ltd Manufacturing method for semiconductor device using laser irradiation
JP2005527972A (en) * 2002-03-29 2005-09-15 マットソン、テクノロジー、インコーポレーテッド Semiconductor pulse heat treatment method using a combination of heat sources
US20100317200A1 (en) * 2009-06-12 2010-12-16 Nec Electronics Corporation Method of manufacturing semiconductor device

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136372A (en) * 1981-02-18 1982-08-23 Fujitsu Ltd Manufacture of mos type field effect semiconductor device
US5232674A (en) * 1989-12-20 1993-08-03 Fujitsu Limited Method of improving surface morphology of laser irradiated surface
US5304357A (en) * 1991-05-15 1994-04-19 Ricoh Co. Ltd. Apparatus for zone melting recrystallization of thin semiconductor film
US5474940A (en) * 1992-01-08 1995-12-12 Sony Corporation Method of fabricating a semiconductor device having shallow junctions in source-drain regions and a gate electrode with a low resistance silicide layer
JPH05206049A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Ion implantation method and ion implantation device
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US7179726B2 (en) 1992-11-06 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US5891764A (en) * 1992-11-06 1999-04-06 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7799665B2 (en) 1992-11-06 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7351615B2 (en) 1992-12-26 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6410374B1 (en) 1992-12-26 2002-06-25 Semiconductor Energy Laborartory Co., Ltd. Method of crystallizing a semiconductor layer in a MIS transistor
US5496768A (en) * 1993-12-03 1996-03-05 Casio Computer Co., Ltd. Method of manufacturing polycrystalline silicon thin film
US6054739A (en) * 1994-12-16 2000-04-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having channel refractive index in first and second directions
US6274885B1 (en) 1994-12-16 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device with TFTs of different refractive index
US6242292B1 (en) 1994-12-16 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Method of producing a semiconductor device with overlapped scanned linear lasers
US7045403B2 (en) 1995-02-21 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6709905B2 (en) 1995-02-21 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6921686B2 (en) 1995-02-21 2005-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6265745B1 (en) 1995-02-21 2001-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7615423B2 (en) 1995-02-21 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6204099B1 (en) 1995-02-21 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
JP2003059856A (en) * 2001-08-09 2003-02-28 Fuji Electric Co Ltd Method of manufacturing semiconductor
JP2005527972A (en) * 2002-03-29 2005-09-15 マットソン、テクノロジー、インコーポレーテッド Semiconductor pulse heat treatment method using a combination of heat sources
JP2004039984A (en) * 2002-07-05 2004-02-05 Sumitomo Heavy Ind Ltd Manufacturing method for semiconductor device using laser irradiation
US20100317200A1 (en) * 2009-06-12 2010-12-16 Nec Electronics Corporation Method of manufacturing semiconductor device
US8551842B2 (en) * 2009-06-12 2013-10-08 Renesas Electronics Corporation Method of manufacturing semiconductor device

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