JPH05206049A - Ion implantation method and ion implantation device - Google Patents
Ion implantation method and ion implantation deviceInfo
- Publication number
- JPH05206049A JPH05206049A JP1461592A JP1461592A JPH05206049A JP H05206049 A JPH05206049 A JP H05206049A JP 1461592 A JP1461592 A JP 1461592A JP 1461592 A JP1461592 A JP 1461592A JP H05206049 A JPH05206049 A JP H05206049A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- substrate
- ion implantation
- light
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体等へのドーピン
グ等に用いるイオン打ち込み方法及びイオン打ち込み装
置に関するもので、格子欠陥の導入を抑えたイオン打ち
込み方法及び上記イオン打ち込み方法を実現するイオン
打ち込み装置を提供する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implanting method and an ion implanting apparatus used for doping semiconductors and the like, and an ion implanting method for suppressing the introduction of lattice defects and an ion implanting method for realizing the ion implanting method. Provide the device.
【０００２】[0002]
【従来の技術】従来半導体へのドーピング等に用いられ
るイオン注入は有効にドーピングが行える一方、同時に
格子欠陥も基板に導入される欠点がある。これらの格子
欠陥はイオン打ち込み後の熱処理によって元の格子に戻
されるが完全ではなく、上記熱処理過程は半導体素子の
製造過程を複雑にしている。2. Description of the Related Art Ion implantation, which is conventionally used for doping semiconductors, can effectively perform doping, but at the same time, lattice defects are introduced into the substrate. Although these lattice defects are returned to the original lattice by the heat treatment after the ion implantation, they are not perfect, and the heat treatment process complicates the manufacturing process of the semiconductor device.
【０００３】[0003]
【発明が解決しようとする課題】イオン打ち込みに関わ
るこの複雑な熱処理過程を簡略化し、さらに格子欠陥の
形成を抑制し、格子欠陥を完全に除去できる方法が望ま
れていた。本発明は、イオン打ち込みによる格子損傷を
抑制するイオン打ち込み方法及び上記イオン打ち込み方
法を実現するイオン打ち込み装置を提供することを目的
とする。There has been a demand for a method capable of simplifying the complicated heat treatment process associated with ion implantation, suppressing the formation of lattice defects, and completely removing the lattice defects. It is an object of the present invention to provide an ion implantation method that suppresses lattice damage due to ion implantation and an ion implantation apparatus that realizes the above ion implantation method.
【０００４】[0004]
【課題を解決するための手段】基板にイオン打ち込みす
る際同時に光を照射する。[Means for Solving the Problems] When a substrate is ion-implanted, light is irradiated at the same time.
【０００５】[0005]
【作用】イオン衝撃による格子欠陥は表面近傍で形成さ
れ、一方光は基板の表面から吸収され表面近傍がより加
熱される。このため、より深い位置にあるインターステ
ィシャルは表面に向かって拡散しベイカンシーをコンペ
ンセートする。また、光の照射がイオン照射中に同時に
行われるので、格子欠陥の濃度が小さい内にコンペンセ
ートされ格子が元の完全な結晶に戻りやすい。The lattice defects due to ion bombardment are formed in the vicinity of the surface, while light is absorbed from the surface of the substrate and the vicinity of the surface is further heated. Therefore, deeper interstitial diffuses toward the surface, compensating for vacancy. Further, since light irradiation is performed simultaneously during ion irradiation, the lattice is likely to return to the original perfect crystal due to compensating while the concentration of lattice defects is low.
【０００６】[0006]
【実施例】本発明は図１に示すごとく、基板１にイオン
打ち込みする際に同時に光２を照射する。イオン衝撃に
よる格子欠陥は表面近傍で形成され、特にコンペンセー
トの難しいベイカンシーはインタースティシャルに比べ
て表面近くに多く分布している。一方光は基板の表面か
ら吸収され表面近傍がより加熱される。このため、より
深い位置にあるインタースティシャルは表面に向かって
拡散しベイカンシーをコンペンセートする。また、光の
照射がイオン照射中に同時に行われるので、格子欠陥の
濃度が小さい内にコンペンセートされ格子が元の完全な
結晶に戻りやすい。上記のようにイオン打ち込みと同時
に光を照射することにより、光照射による熱処理はイオ
ン照射後の熱処理に較べて非常に有効に働く。叉、イオ
ン注入中に格子欠陥の形成が抑制さるため後処理として
の熱処理も必要とせず、製造プロセス模簡略化される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, the present invention irradiates a substrate 1 with light 2 at the same time as ion implantation. Lattice defects due to ion bombardment are formed near the surface, and vacancies, which are difficult to compensate, are more distributed near the surface than interstitial. On the other hand, light is absorbed from the surface of the substrate and the vicinity of the surface is further heated. Therefore, deeper interstitial diffuses toward the surface, compensating for vacancy. Further, since light irradiation is performed simultaneously during ion irradiation, the lattice is likely to return to the original perfect crystal due to compensating while the concentration of lattice defects is low. By irradiating light simultaneously with ion implantation as described above, the heat treatment by light irradiation works much more effectively than the heat treatment after ion irradiation. Further, since the formation of lattice defects is suppressed during the ion implantation, a heat treatment as a post-treatment is not required, and the manufacturing process can be simplified.
【０００７】ここで用いる光の光源はＣＯ２レーザーな
どの赤外線のレーザーでもＡｒレーザー等の可視域さら
にはエキシマレーザー等の紫外線のレーザーでもさらに
は水銀灯、ナトリウムランプ等の光源でも有効であるこ
とを確認した。It has been confirmed that the light source used here is also effective as an infrared laser such as a CO2 laser, a visible region such as an Ar laser, an ultraviolet laser such as an excimer laser, and a light source such as a mercury lamp or a sodium lamp. did.
【０００８】この場合イオン打ち込みのエネルギ−は５
０ｅＶ以上１ＭｅＶ以下が有効であることを確認した。
この範囲で形成される損傷は光照射による局所加熱によ
りコンペンセートできる範囲の広がりに抑えられると考
えられる。この範囲以下ではイオンは基板内に有効に打
ち込まれず、この範囲以上では損傷が大きくなりすぎ
る。In this case, the ion implantation energy is 5
It was confirmed that 0 eV or more and 1 MeV or less are effective.
It is considered that the damage formed in this range can be suppressed to the extent of the compensable range by local heating by light irradiation. Below this range, ions will not be effectively implanted into the substrate, and above this range, damage will be too great.
【０００９】叉、水冷や液体窒素冷却により打ち込まれ
る基板を３００℃以下に保っておくとダイヤモンド内で
インタースティシャルのみが移動可能でベイカンシーは
凍結され安定な大きなベイカンシーが形成されないの
で、イオン損傷による格子欠陥を光照射による局所的な
熱処理によりコンペンセートする事ができ有効である。
これ以上の温度では、イオン打ち込み時にベイカンシー
も移動可能となり大きなベイカンシーが打ち込まれる基
板結晶中に形成され、これを光照射も含めて熱処理によ
りコンペンセートする事は難しい。しかし、本発明に於
いては光照射がイオンの照射と同時に行われるので、ベ
イカンシーの拡散が起こる以前に欠陥がコンペンセート
される可能性が強い。つまり、基板を３００℃以下に保
つと有効であるが、３００℃以上の場合でも、本発明の
効果は十分に期待される。Further, if the substrate to be driven by water cooling or liquid nitrogen cooling is kept at 300 ° C. or lower, only the interstitial can move within the diamond and the vacancy is frozen and a stable large vacancy cannot be formed. It is effective because the lattice defects can be compensated by local heat treatment by light irradiation.
At a temperature higher than this, the vacancy can be moved during the ion implantation, and a large vacancy is formed in the substrate crystal into which the vacancy is implanted, and it is difficult to perform compensating by heat treatment including light irradiation. However, in the present invention, since light irradiation is performed simultaneously with ion irradiation, there is a strong possibility that defects will be compensated before the diffusion of vacancy occurs. That is, it is effective to keep the temperature of the substrate at 300 ° C. or lower, but the effects of the present invention can be expected sufficiently even at 300 ° C. or higher.
【００１０】ここで、光の照射を間欠的にするかまたは
光としてレーザ光（叉は集光光線）を用い光をスキャン
すると、基板が低温に保ったれたまま上記光の照射によ
る熱処理効果が働き有効であった。If the light irradiation is intermittent or the light is scanned using laser light (or a condensed light beam) as the light, the heat treatment effect by the light irradiation can be obtained while the substrate is kept at a low temperature. It was effective.
【００１１】以下、具体的実施例を挙げて本発明をより
詳細に説明する。 （実施例１）本発明のイオン打ち込み方法の第一の実施
例を図１を用いて説明する。基板ホルダー５上にセット
されたＳｉ基板１にイオン源６から１ｘ１０15のドーズ
量で１００ｋｅＶのＢ＋イオン７を打ち込んだ。この時
同時にエキシマレーザ光源８から３０８ｎｍの波長の光
２を照射した。１Ｊｃｍ−２のレーザー光を１０パルス
／秒で間欠的に照射することにより、Ｓｉ基板１中の損
傷がコンペンセートされ、打ち込まれたＢが格子位置に
入り、ｐ型の電気伝導の半導体Ｓｉを得た。Hereinafter, the present invention will be described in more detail with reference to specific examples. (Embodiment 1) A first embodiment of the ion implantation method of the present invention will be described with reference to FIG. B + ions 7 of 100 keV were implanted into the Si substrate 1 set on the substrate holder 5 from the ion source 6 at a dose amount of 1 × 10 15 . At this time, light 2 having a wavelength of 308 nm was simultaneously emitted from the excimer laser light source 8. By intermittently irradiating a laser beam of 1 Jcm-2 at 10 pulses / second, damage in the Si substrate 1 is compensated, the implanted B enters the lattice position, and p-type electrically conductive semiconductor Si is emitted. Obtained.
【００１２】（実施例２）本発明のイオン打ち込み方法
の第二の実施例を図２を用いて説明する。液体窒素冷却
基板ホルダー１１上にセットされたＳｉ基板１にイオン
源６から１ｘ１０ 15のドーズ量で１００ｋｅＶのＢ＋イ
オン７を打ち込んだ。この時同時にＡｒレーザ光源８か
ら５１４．５ｎｍの波長のレーザ光２を照射した。２Ｗ
のレーザー光をレンズ３で絞りスキャナー４を用いて図
のようにスキャンしながら照射することにより、Ｓｉ基
板中の損傷がコンペンセートされ、打ち込まれていたＢ
が格子位置に入り、ｐ型の電気伝導の半導体ダイヤモン
ドを得た。ここで、基板は水により冷却されても有効で
あった。また、光源は実施例１のごとくパルスレーザ光
を用いてもよく、更に水銀灯等の光源を用いそれをレン
ズ３を用いて集光しスキャナ４によってスキャンして
も、シャッタ９を用いて間欠的に光照射しても有効であ
った。(Example 2) Ion implantation method of the present invention
The second embodiment will be described with reference to FIG. Liquid nitrogen cooling
Ions are added to the Si substrate 1 set on the substrate holder 11.
Source 6 to 1x10 15With a dose of 100 keV B + a
I hit on 7. At this time, the Ar laser light source 8
Laser light 2 having a wavelength of 514.5 nm was irradiated. 2W
Figure of laser light of the lens 3 using the aperture scanner 4
By irradiating while scanning like
The damage in the board was compensated and was driven in B
Enters the lattice position, and a p-type electrically conductive semiconductor diamond
I got it. Here, the substrate is effective even if it is cooled by water.
there were. The light source is a pulsed laser beam as in the first embodiment.
May be used, and a light source such as a mercury lamp may be used.
And use the scanner 3 to focus and scan with the scanner 4.
Also, even if the shutter 9 is used to intermittently irradiate light, it is effective.
It was.
【００１３】（実施例３）本発明のイオン打ち込み装置
の第１の実施例を図１を用いて説明する。真空槽１０内
の基板ホルダ５に基板１がセットされる。基板に照射さ
れるようにイオン源６とエキシマレーザ光源８が付属し
ている。ここで光源は、図２のように他のレンズやスキ
ャナ叉はシャッタを用いたものでも有効であった。(Embodiment 3) A first embodiment of the ion implantation apparatus of the present invention will be described with reference to FIG. The substrate 1 is set on the substrate holder 5 in the vacuum chamber 10. An ion source 6 and an excimer laser light source 8 are attached so as to irradiate the substrate. Here, as the light source, another lens, a scanner or a shutter as shown in FIG. 2 was also effective.
【００１４】（実施例４）本発明のイオン打ち込み装置
の第２の実施例を図２を用いて説明する。真空槽１０内
の基板ホルダ１１は水や液体窒素により冷却されてい
る。冷却基板ホルダ１１上に基板１がセットされ、基板
に照射されるようにイオン源６とレーザ光源８が付属し
ている。光源８にはレンズ３やスキャナ４叉はシャッタ
９が用いられている。ここで、光源は図１のパルスレー
ザ光源でも他の実施例２で説明した光源でも有効であっ
た。(Embodiment 4) A second embodiment of the ion implantation apparatus of the present invention will be described with reference to FIG. The substrate holder 11 in the vacuum chamber 10 is cooled by water or liquid nitrogen. The substrate 1 is set on the cooling substrate holder 11, and the ion source 6 and the laser light source 8 are attached so that the substrate 1 is irradiated with the ion source 6. A lens 3, a scanner 4, or a shutter 9 is used as the light source 8. Here, the light source used was either the pulsed laser light source of FIG. 1 or the light source described in the second embodiment.
【００１５】[0015]
【発明の効果】本発明のイオン打ち込み方法及びイオン
打ち込み装置により、後処理（熱処理）を必要とせず簡
便製造過程でｎ型、ｐ型の半導体素子等の形成が可能と
なり、本発明の工業的価値は高い。The ion implantation method and the ion implantation apparatus of the present invention enable formation of n-type and p-type semiconductor elements and the like in a simple manufacturing process without the need for post-treatment (heat treatment). High value.
【図１】本発明のイオン打ち込みと同時に光が照射され
るイオン打ち込み方法の概念図FIG. 1 is a conceptual diagram of an ion implantation method in which light is irradiated simultaneously with ion implantation of the present invention.
【図２】本発明の第二の実施例の光をスキャンするイオ
ン打ち込み方法の概念図FIG. 2 is a conceptual diagram of an ion implantation method for scanning light according to a second embodiment of the present invention.
１ 基板 ２ 光 ３ レンズ ４ スキャナー ５ 基板ホルダー ６ イオン源 ７ イオン ８ 光源 ９ シャッタ １０ 真空槽 １１ 冷却基板ホルダ 1 substrate 2 light 3 lens 4 scanner 5 substrate holder 6 ion source 7 ions 8 light source 9 shutter 10 vacuum tank 11 cooling substrate holder
Claims (11)
時に光も照射することを特徴とするイオン打ち込み方
法。1. An ion implantation method, which comprises irradiating a substrate to be ion-implanted with light simultaneously with the implantation.
に保たれており、打ち込みと同時に上記基板に光も照射
することを特徴とするイオン打ち込み方法。2. An ion implantation method, wherein the substrate to be ion-implanted is kept at 300 ° C. or lower, and the substrate is also irradiated with light simultaneously with the implantation.
５０ｅＶ以上１ＭｅＶ以下である事を特徴とする請求項
１または請求項２記載のイオン打ち込み方法。3. The ion implantation method according to claim 1 or 2, wherein the energy of the particles to be ion-implanted is 50 eV or more and 1 MeV or less.
欠的に基板に照射されることを特徴とする請求項１また
は請求項２記載のイオン打ち込み方法。4. The ion implantation method according to claim 1, wherein the substrate is intermittently irradiated with light which is irradiated simultaneously with the ion implantation.
ーザー光叉は集光された光であり、照射点が基板表面で
スキャンされていることを特徴とする請求項１または請
求項２記載のイオン打ち込み方法。5. The light irradiated at the same time as the ion implantation is a laser light or condensed light, and the irradiation point is scanned on the surface of the substrate. Ion implantation method.
ン源と光源を少なくとも有することを特徴とするイオン
打ち込み装置。6. An ion implanting device comprising at least an ion source and a light source set to irradiate a substrate.
ン源と光源及び基板冷却機構を少なくとも有することを
特徴とするイオン打ち込み装置。7. An ion implantation apparatus comprising at least an ion source, a light source and a substrate cooling mechanism set so as to irradiate a substrate.
ン源の照射エネルギーが５０Ｖ以上１ＭＶ以下であるこ
とを特徴とする請求項６または請求項７記載のイオン打
ち込み装置。8. The ion implantation apparatus according to claim 6, wherein the irradiation energy of the ion source set to irradiate the substrate is 50 V or more and 1 MV or less.
がパルス発光光源であるかシャッターを有しており間欠
的に光照射されることを特徴とする請求項６または請求
項７記載のイオン打ち込み装置。9. The method according to claim 6, wherein the light source set to irradiate the substrate is a pulsed light source or has a shutter, and light is intermittently irradiated. Ion implanter.
源からの光を集光し集光点をスキャンするための光学系
を有することを特徴とする請求項６または請求項７記載
のイオン打ち込み装置。10. The ion according to claim 6 or 7, further comprising an optical system for condensing light from a light source set so as to irradiate the substrate and scanning the condensing point. Driving device.
源がレーザ光源でありレーザ光線をスキャンするための
光学系を有することを特徴とする請求項６または請求項
７記載のイオン打ち込み装置。11. The ion implantation apparatus according to claim 6, wherein the light source set to irradiate the substrate is a laser light source and has an optical system for scanning a laser beam.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1461592A JPH05206049A (en) | 1992-01-30 | 1992-01-30 | Ion implantation method and ion implantation device |
| US07/918,961 US5328855A (en) | 1991-07-25 | 1992-07-24 | Formation of semiconductor diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1461592A JPH05206049A (en) | 1992-01-30 | 1992-01-30 | Ion implantation method and ion implantation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05206049A true JPH05206049A (en) | 1993-08-13 |
Family
ID=11866111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1461592A Pending JPH05206049A (en) | 1991-07-25 | 1992-01-30 | Ion implantation method and ion implantation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05206049A (en) |
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| JP2002184713A (en) * | 2000-12-12 | 2002-06-28 | Denso Corp | Method of manufacturing silicon carbide semiconductor device |
| JP2002289546A (en) * | 2001-03-27 | 2002-10-04 | Denso Corp | Device and method for producing silicon carbide semiconductor |
| JP2005268487A (en) * | 2004-03-18 | 2005-09-29 | Fuji Electric Device Technology Co Ltd | Manufacturing method of semiconductor device, and manufacturing equipment thereof |
| JP2010118674A (en) * | 2010-01-08 | 2010-05-27 | Fuji Electric Systems Co Ltd | Semiconductor device and method of manufacturing the same |
| JP2010153929A (en) * | 2010-04-05 | 2010-07-08 | Fuji Electric Systems Co Ltd | Manufacturing method of semiconductor device and manufacturing apparatus of semiconductor device |
| CN102768973A (en) * | 2012-07-20 | 2012-11-07 | 清华大学 | Laser auxiliary device for ion injection and using method for laser auxiliary device |
| CN104681419A (en) * | 2013-12-03 | 2015-06-03 | 国际商业机器公司 | Apparatus And Method For Laser Heating And Ion Implantation |
| CN104752213A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure forming method |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002184713A (en) * | 2000-12-12 | 2002-06-28 | Denso Corp | Method of manufacturing silicon carbide semiconductor device |
| JP2002289546A (en) * | 2001-03-27 | 2002-10-04 | Denso Corp | Device and method for producing silicon carbide semiconductor |
| JP2005268487A (en) * | 2004-03-18 | 2005-09-29 | Fuji Electric Device Technology Co Ltd | Manufacturing method of semiconductor device, and manufacturing equipment thereof |
| JP2010118674A (en) * | 2010-01-08 | 2010-05-27 | Fuji Electric Systems Co Ltd | Semiconductor device and method of manufacturing the same |
| JP2010153929A (en) * | 2010-04-05 | 2010-07-08 | Fuji Electric Systems Co Ltd | Manufacturing method of semiconductor device and manufacturing apparatus of semiconductor device |
| CN102768973A (en) * | 2012-07-20 | 2012-11-07 | 清华大学 | Laser auxiliary device for ion injection and using method for laser auxiliary device |
| CN104681419A (en) * | 2013-12-03 | 2015-06-03 | 国际商业机器公司 | Apparatus And Method For Laser Heating And Ion Implantation |
| CN104752213A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure forming method |
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