JPS5582771A - Ion implanting device - Google Patents

Ion implanting device

Info

Publication number
JPS5582771A
JPS5582771A JP15630778A JP15630778A JPS5582771A JP S5582771 A JPS5582771 A JP S5582771A JP 15630778 A JP15630778 A JP 15630778A JP 15630778 A JP15630778 A JP 15630778A JP S5582771 A JPS5582771 A JP S5582771A
Authority
JP
Japan
Prior art keywords
plate
sample
temp
ion
refrigerant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15630778A
Other languages
Japanese (ja)
Inventor
Hiroshi Kobayashi
Shintaro Yoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15630778A priority Critical patent/JPS5582771A/en
Publication of JPS5582771A publication Critical patent/JPS5582771A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent a temp. rise of a sample such as a Si wafer in ion implantation and made the temp. distribution of the sample uniform by setting an ion source for applying ion beams at one side of the sample and a heat transfer plate at the other side; closely contacting the plate to the sample by pressing; and uniformly contacting the back side of the plate to a refrigerant. CONSTITUTION:Sample 3 such as Si wafer facing to ion source A is mounted on protruded heat transfer plate 2 including bellows 1 and pressed to plate 2 with binding metal 4. Plate 2 and bellows 1 are attached to base plate 6, and a refrigerant is circulated to plate 6 through pipes 7, 8 so that it is uniformly contacted to the back side of plate 2. This holding device is electrically floated, and to perform precision measurement of an ion electric current pipes 7, 8 are supported by Teflon pipes 9, 10. Freon gas is used as the refrigerant and floated electrically and perfectly from the sample holding device. C-A thermocouple 11 is set at the back side of plate 2, the sample temp. is detected with detector 12, and a signal is sent to controller 13 so as to enable ion implantation at room temp.
JP15630778A 1978-12-20 1978-12-20 Ion implanting device Pending JPS5582771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15630778A JPS5582771A (en) 1978-12-20 1978-12-20 Ion implanting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15630778A JPS5582771A (en) 1978-12-20 1978-12-20 Ion implanting device

Publications (1)

Publication Number Publication Date
JPS5582771A true JPS5582771A (en) 1980-06-21

Family

ID=15624931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15630778A Pending JPS5582771A (en) 1978-12-20 1978-12-20 Ion implanting device

Country Status (1)

Country Link
JP (1) JPS5582771A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213440A (en) * 1982-05-25 1983-12-12 バリアン・アソシエイツ・インコ−ポレイテツド Surface profile adapted for transferring heat from thin and soft product
JPS5923732U (en) * 1982-08-04 1984-02-14 日本真空技術株式会社 Wafer mounting device in rotary ion implanter
JPS60103829U (en) * 1983-12-20 1985-07-15 日新電機株式会社 Thermal conductive elastic sheet
JPS60200963A (en) * 1984-03-23 1985-10-11 Hitachi Ltd Apparatus for forming thin film
JPS62272441A (en) * 1986-05-20 1987-11-26 Tokyo Electron Ltd Wafer-supporting device in ion implanting apparatus
JPS62272445A (en) * 1986-05-20 1987-11-26 Tokyo Electron Ltd Driving gear in high-vacuum chamber for semiconductor production
JPH05206049A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Ion implantation method and ion implantation device
US5244820A (en) * 1990-03-09 1993-09-14 Tadashi Kamata Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
JP2003511856A (en) * 1999-10-01 2003-03-25 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Surface structure and manufacturing method thereof, and electrostatic wafer clamp incorporating surface structure

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213440A (en) * 1982-05-25 1983-12-12 バリアン・アソシエイツ・インコ−ポレイテツド Surface profile adapted for transferring heat from thin and soft product
JPS5923732U (en) * 1982-08-04 1984-02-14 日本真空技術株式会社 Wafer mounting device in rotary ion implanter
JPH0227496Y2 (en) * 1982-08-04 1990-07-25
JPS60103829U (en) * 1983-12-20 1985-07-15 日新電機株式会社 Thermal conductive elastic sheet
JPS60200963A (en) * 1984-03-23 1985-10-11 Hitachi Ltd Apparatus for forming thin film
JPH0565586B2 (en) * 1984-03-23 1993-09-20 Hitachi Ltd
JPS62272441A (en) * 1986-05-20 1987-11-26 Tokyo Electron Ltd Wafer-supporting device in ion implanting apparatus
JPS62272445A (en) * 1986-05-20 1987-11-26 Tokyo Electron Ltd Driving gear in high-vacuum chamber for semiconductor production
US5244820A (en) * 1990-03-09 1993-09-14 Tadashi Kamata Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
JPH05206049A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Ion implantation method and ion implantation device
JP2003511856A (en) * 1999-10-01 2003-03-25 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Surface structure and manufacturing method thereof, and electrostatic wafer clamp incorporating surface structure
JP4854056B2 (en) * 1999-10-01 2012-01-11 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Cooling device and clamping device

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